Low temperature photoluminescence and photoacoustic characterization of Zn-doped In x Ga 1-x As y Sb 1-y epitaxial layers for photovoltaic applications

M. L. Gomez-Herrera, J. L. Herrera-Perez, P. Rodriguez-Fragoso, I. Riech, J. G. Mendoza-Alvarez

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper we present results on the characterization of Zn-doped InGaAsSb epitaxial layers to be used in the development of stacked solar cells. Using the liquid phase epitaxy technique we have grown p-type InGaAsSb layers, using Zn as the dopant, and n-type Te-doped GaSb wafers as substrates. A series of Zn-doped InGaAsSb samples were prepared by changing the amount of Zn in the melt in the range: 0.1-0.9 mg to obtain different p-type doping levels, and consequently, different p-n region characteristics. Low temperature photoluminescence spectra (PL) were measured at 15 K using at various excitation powers in the range 80-160 mW. PL spectra show the presence of an exciton-related band emission around 0.642 eV and a band at 0.633 eV which we have related to radiative emission involving Zn-acceptors. Using the photoacoustic technique we measured the interface recombination velocities related to the interface crystalline quality, showing that the layer-substrate interface quality degrades as the Zn concentration in the layers increases.

Original languageEnglish
Pages (from-to)761-763
Number of pages3
JournalApplied Surface Science
Volume255
Issue number3
DOIs
StatePublished - 30 Nov 2008
Externally publishedYes

Keywords

  • Liquid phase epitaxy growth
  • Photovoltaic devices
  • Semiconductor photoluminescence

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