Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

T. V. Torchynska; J. L. Casas Espinola; P. G. Eliseev; A. Stintz; K. J. Mallooy; R. Pena Sierra

doi:10.1002/pssa.200306302

Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

Título traducido de la contribución: Excitones localizados en puntos cuánticos autoensamblados de InAs integrados en pozos multicuánticos de InGaAs/GaAs

T. V. Torchynska, J. L. Casas Espinola, P. G. Eliseev, A. Stintz, K. J. Mallooy, R. Pena Sierra

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

11 Citas (Scopus)

Resumen

The temperature-dependent photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In_0.15Ga_0.8As/GaAs multi-quantum well (MQW) structures have been investigated. Spectral peak shift and PL temperature quenching for ground state (GS) and first excited state (lES) optical transitions in the range 12-220 K are analyzed. Small FWHM Values equal to 37 and 27 meV at 12 K characterize the GS and lES transitions, respectively. For the highly uniform QDs no unusual decrease of the FWHM at low temperatures was seen that would be connected with the redistribution of carriers between the QDs. The activation energies of the PL temperature quenching processes for GS and lES in InAs QDs are found to be the same, about 50-52 meV. The reasons for the same GS and lES thermal activation energies in InAs self-assembled QDs are discussed.

Título traducido de la contribución	Excitones localizados en puntos cuánticos autoensamblados de InAs integrados en pozos multicuánticos de InGaAs/GaAs
Idioma original	Inglés
Páginas (desde-hasta)	209-213
Número de páginas	5
Publicación	Physica Status Solidi (A) Applied Research
Volumen	195
N.º	1 SPEC
DOI	https://doi.org/10.1002/pssa.200306302
Estado	Publicada - ene. 2003

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title = "Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells",

abstract = "The temperature-dependent photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.8As/GaAs multi-quantum well (MQW) structures have been investigated. Spectral peak shift and PL temperature quenching for ground state (GS) and first excited state (lES) optical transitions in the range 12-220 K are analyzed. Small FWHM Values equal to 37 and 27 meV at 12 K characterize the GS and lES transitions, respectively. For the highly uniform QDs no unusual decrease of the FWHM at low temperatures was seen that would be connected with the redistribution of carriers between the QDs. The activation energies of the PL temperature quenching processes for GS and lES in InAs QDs are found to be the same, about 50-52 meV. The reasons for the same GS and lES thermal activation energies in InAs self-assembled QDs are discussed.",

author = "Torchynska, {T. V.} and {Casas Espinola}, {J. L.} and Eliseev, {P. G.} and A. Stintz and Mallooy, {K. J.} and {Pena Sierra}, R.",

year = "2003",

month = jan,

doi = "10.1002/pssa.200306302",

language = "Ingl{\'e}s",

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journal = "Physica Status Solidi (A) Applied Research",

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T1 - Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

AU - Torchynska, T. V.

AU - Casas Espinola, J. L.

AU - Eliseev, P. G.

AU - Stintz, A.

AU - Mallooy, K. J.

AU - Pena Sierra, R.

PY - 2003/1

Y1 - 2003/1

N2 - The temperature-dependent photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.8As/GaAs multi-quantum well (MQW) structures have been investigated. Spectral peak shift and PL temperature quenching for ground state (GS) and first excited state (lES) optical transitions in the range 12-220 K are analyzed. Small FWHM Values equal to 37 and 27 meV at 12 K characterize the GS and lES transitions, respectively. For the highly uniform QDs no unusual decrease of the FWHM at low temperatures was seen that would be connected with the redistribution of carriers between the QDs. The activation energies of the PL temperature quenching processes for GS and lES in InAs QDs are found to be the same, about 50-52 meV. The reasons for the same GS and lES thermal activation energies in InAs self-assembled QDs are discussed.

AB - The temperature-dependent photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.8As/GaAs multi-quantum well (MQW) structures have been investigated. Spectral peak shift and PL temperature quenching for ground state (GS) and first excited state (lES) optical transitions in the range 12-220 K are analyzed. Small FWHM Values equal to 37 and 27 meV at 12 K characterize the GS and lES transitions, respectively. For the highly uniform QDs no unusual decrease of the FWHM at low temperatures was seen that would be connected with the redistribution of carriers between the QDs. The activation energies of the PL temperature quenching processes for GS and lES in InAs QDs are found to be the same, about 50-52 meV. The reasons for the same GS and lES thermal activation energies in InAs self-assembled QDs are discussed.

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U2 - 10.1002/pssa.200306302

DO - 10.1002/pssa.200306302

M3 - Artículo

AN - SCOPUS:0037280125

SN - 0031-8965

VL - 195

SP - 209

EP - 213

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1 SPEC

ER -

Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

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