Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

T. V. Torchynska; J. L. Casas Espinola; P. G. Eliseev; A. Stintz; K. J. Mallooy; R. Pena Sierra

doi:10.1002/pssa.200306302

Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

T. V. Torchynska, J. L. Casas Espinola, P. G. Eliseev, A. Stintz, K. J. Mallooy, R. Pena Sierra

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The temperature-dependent photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In_0.15Ga_0.8As/GaAs multi-quantum well (MQW) structures have been investigated. Spectral peak shift and PL temperature quenching for ground state (GS) and first excited state (lES) optical transitions in the range 12-220 K are analyzed. Small FWHM Values equal to 37 and 27 meV at 12 K characterize the GS and lES transitions, respectively. For the highly uniform QDs no unusual decrease of the FWHM at low temperatures was seen that would be connected with the redistribution of carriers between the QDs. The activation energies of the PL temperature quenching processes for GS and lES in InAs QDs are found to be the same, about 50-52 meV. The reasons for the same GS and lES thermal activation energies in InAs self-assembled QDs are discussed.

Translated title of the contribution	Excitones localizados en puntos cuánticos autoensamblados de InAs integrados en pozos multicuánticos de InGaAs/GaAs
Original language	English
Pages (from-to)	209-213
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	195
Issue number	1 SPEC
DOIs	https://doi.org/10.1002/pssa.200306302
State	Published - Jan 2003

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title = "Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells",

abstract = "The temperature-dependent photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.8As/GaAs multi-quantum well (MQW) structures have been investigated. Spectral peak shift and PL temperature quenching for ground state (GS) and first excited state (lES) optical transitions in the range 12-220 K are analyzed. Small FWHM Values equal to 37 and 27 meV at 12 K characterize the GS and lES transitions, respectively. For the highly uniform QDs no unusual decrease of the FWHM at low temperatures was seen that would be connected with the redistribution of carriers between the QDs. The activation energies of the PL temperature quenching processes for GS and lES in InAs QDs are found to be the same, about 50-52 meV. The reasons for the same GS and lES thermal activation energies in InAs self-assembled QDs are discussed.",

author = "Torchynska, {T. V.} and {Casas Espinola}, {J. L.} and Eliseev, {P. G.} and A. Stintz and Mallooy, {K. J.} and {Pena Sierra}, R.",

year = "2003",

month = jan,

doi = "10.1002/pssa.200306302",

language = "Ingl{\'e}s",

volume = "195",

pages = "209--213",

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T1 - Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

AU - Torchynska, T. V.

AU - Casas Espinola, J. L.

AU - Eliseev, P. G.

AU - Stintz, A.

AU - Mallooy, K. J.

AU - Pena Sierra, R.

PY - 2003/1

Y1 - 2003/1

N2 - The temperature-dependent photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.8As/GaAs multi-quantum well (MQW) structures have been investigated. Spectral peak shift and PL temperature quenching for ground state (GS) and first excited state (lES) optical transitions in the range 12-220 K are analyzed. Small FWHM Values equal to 37 and 27 meV at 12 K characterize the GS and lES transitions, respectively. For the highly uniform QDs no unusual decrease of the FWHM at low temperatures was seen that would be connected with the redistribution of carriers between the QDs. The activation energies of the PL temperature quenching processes for GS and lES in InAs QDs are found to be the same, about 50-52 meV. The reasons for the same GS and lES thermal activation energies in InAs self-assembled QDs are discussed.

AB - The temperature-dependent photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In0.15Ga0.8As/GaAs multi-quantum well (MQW) structures have been investigated. Spectral peak shift and PL temperature quenching for ground state (GS) and first excited state (lES) optical transitions in the range 12-220 K are analyzed. Small FWHM Values equal to 37 and 27 meV at 12 K characterize the GS and lES transitions, respectively. For the highly uniform QDs no unusual decrease of the FWHM at low temperatures was seen that would be connected with the redistribution of carriers between the QDs. The activation energies of the PL temperature quenching processes for GS and lES in InAs QDs are found to be the same, about 50-52 meV. The reasons for the same GS and lES thermal activation energies in InAs self-assembled QDs are discussed.

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U2 - 10.1002/pssa.200306302

DO - 10.1002/pssa.200306302

M3 - Artículo

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1 SPEC

ER -

Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

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