Localization of defects in InAs QD symmetric InGaAs/GaAs DWELL structures

J. L. Casas Espínola; T. V. Torchynska; E. Velasquez Lozada; L. V. Shcherbyna; A. Stintz; R. Peña Sierra

doi:10.1016/j.physb.2007.09.027

Localization of defects in InAs QD symmetric InGaAs/GaAs DWELL structures

J. L. Casas Espínola, T. V. Torchynska, E. Velasquez Lozada, L. V. Shcherbyna, A. Stintz, R. Peña Sierra

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

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Resumen

The photoluminescence (PL), its power and temperature dependences have been studded for the ensembles of InAs quantum dots (QD) embedded in symmetric In_0.15Ga_0.85As/GaAs quantum wells prepared at different QD growth temperatures from the range 470-535 °C. The solution of the set of rate equations for exciton dynamics was used to analyze the nature of thermal activation energies of the QD PL quenching. It is revealed three different stages of thermally activated quenching of the QD PL intensity caused by thermal escape of excitons from the In_0.15Ga_0.85As/GaAs buffer and capping quantum wells (QWs) into the GaAs barrier and from the QDs into the GaAs barrier or into barrier/QW interfaces with their subsequent nonradiative recombination. The variety of activation energies of PL thermal quenching is discussed as well.

Idioma original	Inglés
Páginas (desde-hasta)	584-586
Número de páginas	3
Publicación	Physica B: Condensed Matter
Volumen	401-402
DOI	https://doi.org/10.1016/j.physb.2007.09.027
Estado	Publicada - 15 dic. 2007

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@article{0b1116666f6f471cbf88fc24936f2fd4,

title = "Localization of defects in InAs QD symmetric InGaAs/GaAs DWELL structures",

abstract = "The photoluminescence (PL), its power and temperature dependences have been studded for the ensembles of InAs quantum dots (QD) embedded in symmetric In0.15Ga0.85As/GaAs quantum wells prepared at different QD growth temperatures from the range 470-535 °C. The solution of the set of rate equations for exciton dynamics was used to analyze the nature of thermal activation energies of the QD PL quenching. It is revealed three different stages of thermally activated quenching of the QD PL intensity caused by thermal escape of excitons from the In0.15Ga0.85As/GaAs buffer and capping quantum wells (QWs) into the GaAs barrier and from the QDs into the GaAs barrier or into barrier/QW interfaces with their subsequent nonradiative recombination. The variety of activation energies of PL thermal quenching is discussed as well.",

keywords = "InAs quantum dots, Photoluminescence, Thermal quenching",

author = "{Casas Esp{\'i}nola}, {J. L.} and Torchynska, {T. V.} and {Velasquez Lozada}, E. and Shcherbyna, {L. V.} and A. Stintz and {Pe{\~n}a Sierra}, R.",

note = "Funding Information: The work was supported by SIP at Instituto Polit{\'e}cnico Nacional, Mexico.",

year = "2007",

month = dec,

day = "15",

doi = "10.1016/j.physb.2007.09.027",

language = "Ingl{\'e}s",

volume = "401-402",

pages = "584--586",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

}

TY - JOUR

T1 - Localization of defects in InAs QD symmetric InGaAs/GaAs DWELL structures

AU - Casas Espínola, J. L.

AU - Torchynska, T. V.

AU - Velasquez Lozada, E.

AU - Shcherbyna, L. V.

AU - Stintz, A.

AU - Peña Sierra, R.

N1 - Funding Information: The work was supported by SIP at Instituto Politécnico Nacional, Mexico.

PY - 2007/12/15

Y1 - 2007/12/15

N2 - The photoluminescence (PL), its power and temperature dependences have been studded for the ensembles of InAs quantum dots (QD) embedded in symmetric In0.15Ga0.85As/GaAs quantum wells prepared at different QD growth temperatures from the range 470-535 °C. The solution of the set of rate equations for exciton dynamics was used to analyze the nature of thermal activation energies of the QD PL quenching. It is revealed three different stages of thermally activated quenching of the QD PL intensity caused by thermal escape of excitons from the In0.15Ga0.85As/GaAs buffer and capping quantum wells (QWs) into the GaAs barrier and from the QDs into the GaAs barrier or into barrier/QW interfaces with their subsequent nonradiative recombination. The variety of activation energies of PL thermal quenching is discussed as well.

AB - The photoluminescence (PL), its power and temperature dependences have been studded for the ensembles of InAs quantum dots (QD) embedded in symmetric In0.15Ga0.85As/GaAs quantum wells prepared at different QD growth temperatures from the range 470-535 °C. The solution of the set of rate equations for exciton dynamics was used to analyze the nature of thermal activation energies of the QD PL quenching. It is revealed three different stages of thermally activated quenching of the QD PL intensity caused by thermal escape of excitons from the In0.15Ga0.85As/GaAs buffer and capping quantum wells (QWs) into the GaAs barrier and from the QDs into the GaAs barrier or into barrier/QW interfaces with their subsequent nonradiative recombination. The variety of activation energies of PL thermal quenching is discussed as well.

KW - InAs quantum dots

KW - Photoluminescence

KW - Thermal quenching

UR - http://www.scopus.com/inward/record.url?scp=36048940719&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2007.09.027

DO - 10.1016/j.physb.2007.09.027

M3 - Artículo

SN - 0921-4526

VL - 401-402

SP - 584

EP - 586

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Localization of defects in InAs QD symmetric InGaAs/GaAs DWELL structures

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