LIGHT SCATTERING DUE TO INTERVALLEY ELECTRON DENSITY FLUCTUATIONS IN n-Si.

G. Contreras; A. K. Sood; M. Cardona

doi:10.1007/978-1-4615-7682-2_255

LIGHT SCATTERING DUE TO INTERVALLEY ELECTRON DENSITY FLUCTUATIONS IN n-Si.

G. Contreras, A. K. Sood, M. Cardona

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

Resumen

Raman scattering due to intervalley electron density fluctuations is discussed for n-Si. The experimental results for several carrier concentrations, temperatures, and laser wavelengths are explained by a scattering mechanism based on intravalley diffusion.

Idioma original	Inglés
Título de la publicación alojada	Unknown Host Publication Title
Editorial	Springer Verlag
Páginas	1129-1132
Número de páginas	4
ISBN (versión impresa)	0387961089, 9780387961088
DOI	https://doi.org/10.1007/978-1-4615-7682-2_255
Estado	Publicada - 1985
Publicado de forma externa	Sí

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10.1007/978-1-4615-7682-2_255

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@inproceedings{c6fadc0d4e1b409d99e22f8aaec34604,

title = "LIGHT SCATTERING DUE TO INTERVALLEY ELECTRON DENSITY FLUCTUATIONS IN n-Si.",

abstract = "Raman scattering due to intervalley electron density fluctuations is discussed for n-Si. The experimental results for several carrier concentrations, temperatures, and laser wavelengths are explained by a scattering mechanism based on intravalley diffusion.",

author = "G. Contreras and Sood, {A. K.} and M. Cardona",

year = "1985",

doi = "10.1007/978-1-4615-7682-2_255",

language = "Ingl{\'e}s",

isbn = "0387961089",

publisher = "Springer Verlag",

pages = "1129--1132",

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address = "Alemania",

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TY - GEN

T1 - LIGHT SCATTERING DUE TO INTERVALLEY ELECTRON DENSITY FLUCTUATIONS IN n-Si.

AU - Contreras, G.

AU - Sood, A. K.

AU - Cardona, M.

PY - 1985

Y1 - 1985

N2 - Raman scattering due to intervalley electron density fluctuations is discussed for n-Si. The experimental results for several carrier concentrations, temperatures, and laser wavelengths are explained by a scattering mechanism based on intravalley diffusion.

AB - Raman scattering due to intervalley electron density fluctuations is discussed for n-Si. The experimental results for several carrier concentrations, temperatures, and laser wavelengths are explained by a scattering mechanism based on intravalley diffusion.

UR - http://www.scopus.com/inward/record.url?scp=0022201189&partnerID=8YFLogxK

U2 - 10.1007/978-1-4615-7682-2_255

DO - 10.1007/978-1-4615-7682-2_255

M3 - Contribución a la conferencia

AN - SCOPUS:0022201189

SN - 0387961089

SN - 9780387961088

SP - 1129

EP - 1132

BT - Unknown Host Publication Title

PB - Springer Verlag

ER -

LIGHT SCATTERING DUE TO INTERVALLEY ELECTRON DENSITY FLUCTUATIONS IN n-Si.

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