Abstract
Raman scattering due to intervalley electron density fluctuations is discussed for n-Si. The experimental results for several carrier concentrations, temperatures, and laser wavelengths are explained by a scattering mechanism based on intravalley diffusion.
Original language | English |
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Title of host publication | Unknown Host Publication Title |
Publisher | Springer Verlag |
Pages | 1129-1132 |
Number of pages | 4 |
ISBN (Print) | 0387961089, 9780387961088 |
DOIs | |
State | Published - 1985 |
Externally published | Yes |