LIGHT SCATTERING DUE TO INTERVALLEY ELECTRON DENSITY FLUCTUATIONS IN n-Si.

G. Contreras, A. K. Sood, M. Cardona

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Raman scattering due to intervalley electron density fluctuations is discussed for n-Si. The experimental results for several carrier concentrations, temperatures, and laser wavelengths are explained by a scattering mechanism based on intravalley diffusion.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherSpringer Verlag
Pages1129-1132
Number of pages4
ISBN (Print)0387961089, 9780387961088
DOIs
StatePublished - 1985
Externally publishedYes

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