Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

E. Andrade; V. M. Garcia; P. K. Nair; M. T.S. Nair; E. P. Zavala; L. Huerta; M. F. Rocha

doi:10.1016/S0168-583X(99)00994-5

Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

E. Andrade, V. M. Garcia, P. K. Nair, M. T.S. Nair, E. P. Zavala, L. Huerta, M. F. Rocha

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

10 Citas (Scopus)

Resumen

Analyses of Rutherford back scattered (RBS) ⁴He⁺-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of Cu_xSe thin film to Cu₂Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

Idioma original	Inglés
Páginas (desde-hasta)	635-640
Número de páginas	6
Publicación	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volumen	161
DOI	https://doi.org/10.1016/S0168-583X(99)00994-5
Estado	Publicada - mar. 2000
Evento	The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology - Dresden, Ger Duración: 26 jul. 1999 → 30 jul. 1999

Acceder al documento

10.1016/S0168-583X(99)00994-5

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{dac47721359b484095ad063e0bf5c3da,

title = "Ion beam analysis of copper selenide thin films prepared by chemical bath deposition",

abstract = "Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of CuxSe thin film to Cu2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.",

author = "E. Andrade and Garcia, {V. M.} and Nair, {P. K.} and Nair, {M. T.S.} and Zavala, {E. P.} and L. Huerta and Rocha, {M. F.}",

year = "2000",

month = mar,

doi = "10.1016/S0168-583X(99)00994-5",

language = "Ingl{\'e}s",

volume = "161",

pages = "635--640",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

note = "The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology ; Conference date: 26-07-1999 Through 30-07-1999",

}

Ion beam analysis of copper selenide thin films prepared by chemical bath deposition. / Andrade, E.; Garcia, V. M.; Nair, P. K. et al.
En: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 161, 03.2000, p. 635-640.

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

TY - JOUR

T1 - Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

AU - Andrade, E.

AU - Garcia, V. M.

AU - Nair, P. K.

AU - Nair, M. T.S.

AU - Zavala, E. P.

AU - Huerta, L.

AU - Rocha, M. F.

PY - 2000/3

Y1 - 2000/3

N2 - Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of CuxSe thin film to Cu2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

AB - Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of CuxSe thin film to Cu2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

UR - http://www.scopus.com/inward/record.url?scp=0033889527&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(99)00994-5

DO - 10.1016/S0168-583X(99)00994-5

M3 - Artículo de la conferencia

SN - 0168-583X

VL - 161

SP - 635

EP - 640

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology

Y2 - 26 July 1999 through 30 July 1999

ER -

Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto