Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

E. Andrade; V. M. Garcia; P. K. Nair; M. T.S. Nair; E. P. Zavala; L. Huerta; M. F. Rocha

doi:10.1016/S0168-583X(99)00994-5

Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

E. Andrade, V. M. Garcia, P. K. Nair, M. T.S. Nair, E. P. Zavala, L. Huerta, M. F. Rocha

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

Analyses of Rutherford back scattered (RBS) ⁴He⁺-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of Cu_xSe thin film to Cu₂Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

Original language	English
Pages (from-to)	635-640
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	161
DOIs	https://doi.org/10.1016/S0168-583X(99)00994-5
State	Published - Mar 2000
Event	The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology - Dresden, Ger Duration: 26 Jul 1999 → 30 Jul 1999

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10.1016/S0168-583X(99)00994-5

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title = "Ion beam analysis of copper selenide thin films prepared by chemical bath deposition",

abstract = "Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of CuxSe thin film to Cu2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.",

author = "E. Andrade and Garcia, {V. M.} and Nair, {P. K.} and Nair, {M. T.S.} and Zavala, {E. P.} and L. Huerta and Rocha, {M. F.}",

year = "2000",

month = mar,

doi = "10.1016/S0168-583X(99)00994-5",

language = "Ingl{\'e}s",

volume = "161",

pages = "635--640",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

note = "The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology ; Conference date: 26-07-1999 Through 30-07-1999",

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TY - JOUR

T1 - Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

AU - Andrade, E.

AU - Garcia, V. M.

AU - Nair, P. K.

AU - Nair, M. T.S.

AU - Zavala, E. P.

AU - Huerta, L.

AU - Rocha, M. F.

PY - 2000/3

Y1 - 2000/3

N2 - Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of CuxSe thin film to Cu2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

AB - Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of CuxSe thin film to Cu2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

UR - http://www.scopus.com/inward/record.url?scp=0033889527&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(99)00994-5

DO - 10.1016/S0168-583X(99)00994-5

M3 - Artículo de la conferencia

SN - 0168-583X

VL - 161

SP - 635

EP - 640

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology

Y2 - 26 July 1999 through 30 July 1999

ER -

Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

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