TY - GEN
T1 - Interface phenomena in MnxOy/ZnO) thin films for oxide electronics
AU - Neri-Espinoza, Karen A.
AU - Baca-Arroyo, Roberto
AU - Andraca-Adame, Jose A.
AU - Pena-Sierra, Ramon
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/9
Y1 - 2019/9
N2 - Interface phenomena in oxide electronics are of utmost importance due to the interactions that are present between the materials and can offer interesting electrical behavior for adaptive oxide devices. Thin films were synthesized on a Si (100) n-type substrate by Sputtering where the layers of manganese oxide are obtained through thermal oxidation at medium temperatures (T} < 500°C) and later on, a layer of ZnO:Zn is deposited. X-Ray Diffraction (XRD) and Raman spectroscopy are done to investigate the structure of the Mn; the layers of manganese exhibit different phases of oxidation caused by the thermal process. To study the interface phenomena, an electrical characterization (current - voltage curves) is done to understand what happens in the interface of MnxOy/ZnO. In one of the IV curves obtained of a ZnMnSi structure, a similar curve to the characteristic one of a diode is observed, thus, this work intends to demonstrate the use of Mn and Zn as important metals for oxide electronics and the development of electronic adaptive devices.
AB - Interface phenomena in oxide electronics are of utmost importance due to the interactions that are present between the materials and can offer interesting electrical behavior for adaptive oxide devices. Thin films were synthesized on a Si (100) n-type substrate by Sputtering where the layers of manganese oxide are obtained through thermal oxidation at medium temperatures (T} < 500°C) and later on, a layer of ZnO:Zn is deposited. X-Ray Diffraction (XRD) and Raman spectroscopy are done to investigate the structure of the Mn; the layers of manganese exhibit different phases of oxidation caused by the thermal process. To study the interface phenomena, an electrical characterization (current - voltage curves) is done to understand what happens in the interface of MnxOy/ZnO. In one of the IV curves obtained of a ZnMnSi structure, a similar curve to the characteristic one of a diode is observed, thus, this work intends to demonstrate the use of Mn and Zn as important metals for oxide electronics and the development of electronic adaptive devices.
KW - Adaptive oxide electronics
KW - Interface
KW - Mn
KW - Sputtering
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=85075101243&partnerID=8YFLogxK
U2 - 10.1109/ICEEE.2019.8884493
DO - 10.1109/ICEEE.2019.8884493
M3 - Contribución a la conferencia
AN - SCOPUS:85075101243
T3 - 2019 16th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2019
BT - 2019 16th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2019
Y2 - 11 September 2019 through 13 September 2019
ER -