Interface phenomena in Mn_xO_y/ZnO) thin films for oxide electronics

Interface phenomena in oxide electronics are of utmost importance due to the interactions that are present between the materials and can offer interesting electrical behavior for adaptive oxide devices. Thin films were synthesized on a Si (100) n-type substrate by Sputtering where the layers of manganese oxide are obtained through thermal oxidation at medium temperatures (T} < 500°C) and later on, a layer of ZnO:Zn is deposited. X-Ray Diffraction (XRD) and Raman spectroscopy are done to investigate the structure of the Mn; the layers of manganese exhibit different phases of oxidation caused by the thermal process. To study the interface phenomena, an electrical characterization (current - voltage curves) is done to understand what happens in the interface of Mn_xO_y/ZnO. In one of the IV curves obtained of a ZnMnSi structure, a similar curve to the characteristic one of a diode is observed, thus, this work intends to demonstrate the use of Mn and Zn as important metals for oxide electronics and the development of electronic adaptive devices.