Interdiffusion of CdS/CdTe in laser-deposited and rf sputtered alloys, bilayers and solar cells

A. Fischer; C. Narayanswamy; D. S. Grecu; E. Bykov; S. A. Nance; U. N. Jayamaha; G. Contreras-Puente; A. D. Compaan

doi:10.1109/pvsc.1996.564279

Interdiffusion of CdS/CdTe in laser-deposited and rf sputtered alloys, bilayers and solar cells

A. Fischer, C. Narayanswamy, D. S. Grecu, E. Bykov, S. A. Nance, U. N. Jayamaha, G. Contreras-Puente, A. D. Compaan

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

6 Citas (Scopus)

Resumen

We have studied interdiffusion between CdS and CdTe in solar cells, bilayers, and in alloy films by Rutherford backscattering (RBS), Raman scattering, photoluminescence (PL), optical absorption and x-ray diffraction. The cells and films were fabricated by laser physical vapor deposition (LPVD) or by rf sputtering (RFS). We also have prepared films of the ternary alloy material (CdS_xTe_1-x) by LPVD, related film composition to target composition by WDS, and obtained values for band bowing, lattice constant, phonon frequencies, and low temperature PL characteristics. The RBS spectra, obtained from thin bilayers of CdTe/CdS on fused silica, provide information on interdiffusion with approx.200angstrom depth resolution.

Idioma original	Inglés
Páginas (desde-hasta)	921-924
Número de páginas	4
Publicación	Conference Record of the IEEE Photovoltaic Specialists Conference
DOI	https://doi.org/10.1109/pvsc.1996.564279
Estado	Publicada - 1996
Publicado de forma externa	Sí
Evento	Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA Duración: 13 may. 1996 → 17 may. 1996

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title = "Interdiffusion of CdS/CdTe in laser-deposited and rf sputtered alloys, bilayers and solar cells",

abstract = "We have studied interdiffusion between CdS and CdTe in solar cells, bilayers, and in alloy films by Rutherford backscattering (RBS), Raman scattering, photoluminescence (PL), optical absorption and x-ray diffraction. The cells and films were fabricated by laser physical vapor deposition (LPVD) or by rf sputtering (RFS). We also have prepared films of the ternary alloy material (CdSxTe1-x) by LPVD, related film composition to target composition by WDS, and obtained values for band bowing, lattice constant, phonon frequencies, and low temperature PL characteristics. The RBS spectra, obtained from thin bilayers of CdTe/CdS on fused silica, provide information on interdiffusion with approx.200angstrom depth resolution.",

author = "A. Fischer and C. Narayanswamy and Grecu, {D. S.} and E. Bykov and Nance, {S. A.} and Jayamaha, {U. N.} and G. Contreras-Puente and Compaan, {A. D.}",

year = "1996",

doi = "10.1109/pvsc.1996.564279",

language = "Ingl{\'e}s",

pages = "921--924",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

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TY - JOUR

T1 - Interdiffusion of CdS/CdTe in laser-deposited and rf sputtered alloys, bilayers and solar cells

AU - Fischer, A.

AU - Narayanswamy, C.

AU - Grecu, D. S.

AU - Bykov, E.

AU - Nance, S. A.

AU - Jayamaha, U. N.

AU - Contreras-Puente, G.

AU - Compaan, A. D.

PY - 1996

Y1 - 1996

N2 - We have studied interdiffusion between CdS and CdTe in solar cells, bilayers, and in alloy films by Rutherford backscattering (RBS), Raman scattering, photoluminescence (PL), optical absorption and x-ray diffraction. The cells and films were fabricated by laser physical vapor deposition (LPVD) or by rf sputtering (RFS). We also have prepared films of the ternary alloy material (CdSxTe1-x) by LPVD, related film composition to target composition by WDS, and obtained values for band bowing, lattice constant, phonon frequencies, and low temperature PL characteristics. The RBS spectra, obtained from thin bilayers of CdTe/CdS on fused silica, provide information on interdiffusion with approx.200angstrom depth resolution.

AB - We have studied interdiffusion between CdS and CdTe in solar cells, bilayers, and in alloy films by Rutherford backscattering (RBS), Raman scattering, photoluminescence (PL), optical absorption and x-ray diffraction. The cells and films were fabricated by laser physical vapor deposition (LPVD) or by rf sputtering (RFS). We also have prepared films of the ternary alloy material (CdSxTe1-x) by LPVD, related film composition to target composition by WDS, and obtained values for band bowing, lattice constant, phonon frequencies, and low temperature PL characteristics. The RBS spectra, obtained from thin bilayers of CdTe/CdS on fused silica, provide information on interdiffusion with approx.200angstrom depth resolution.

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U2 - 10.1109/pvsc.1996.564279

DO - 10.1109/pvsc.1996.564279

M3 - Artículo de la conferencia

AN - SCOPUS:0030415001

SN - 0160-8371

SP - 921

EP - 924

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Interdiffusion of CdS/CdTe in laser-deposited and rf sputtered alloys, bilayers and solar cells

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