Interdiffusion of CdS/CdTe in laser-deposited and rf sputtered alloys, bilayers and solar cells

A. Fischer, C. Narayanswamy, D. S. Grecu, E. Bykov, S. A. Nance, U. N. Jayamaha, G. Contreras-Puente, A. D. Compaan

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

We have studied interdiffusion between CdS and CdTe in solar cells, bilayers, and in alloy films by Rutherford backscattering (RBS), Raman scattering, photoluminescence (PL), optical absorption and x-ray diffraction. The cells and films were fabricated by laser physical vapor deposition (LPVD) or by rf sputtering (RFS). We also have prepared films of the ternary alloy material (CdSxTe1-x) by LPVD, related film composition to target composition by WDS, and obtained values for band bowing, lattice constant, phonon frequencies, and low temperature PL characteristics. The RBS spectra, obtained from thin bilayers of CdTe/CdS on fused silica, provide information on interdiffusion with approx.200angstrom depth resolution.

Original languageEnglish
Pages (from-to)921-924
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
DOIs
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA
Duration: 13 May 199617 May 1996

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