TY - JOUR
T1 - Integral function method for determination of nonlinear harmonic distortion
AU - Cerdeira, Antonio
AU - Alemán, Miguel A.
AU - Estrada, Magali
AU - Flandre, Denis
N1 - Funding Information:
The SOI FD transistors were supplied by the Microelectronic Laboratory of the Université catholique de Louvain. This work was supported by a CONACYT Project 34400A. D. Flandre is Honorary Senior Research Associate of FNRS, Belgium.
PY - 2004/12
Y1 - 2004/12
N2 - The analysis of harmonic distortion is of prime importance for the analog and mixed integrated circuits. Recently we presented a new integral function method (IFM), based on a completely new principle, which allows the calculation of harmonic distortion using the DC output characteristic of devices or circuits. In this work we complement the integral function method to provide direct calculation of the following distortion figures: total harmonic distortion (THD), second harmonic distortion (HD2) and third harmonic distortion (HD3), voltage intercept points (VIP) and the intermodulation distortion (IMD). The comparison with the same distortion figures calculated by the Fourier coefficients (FC), by direct AC measurements and from FFT in simulators, indicates that results obtained by IFM give an excellent agreement in the full range of the analyzed active regions. The IFM combines simplicity and computer efficiency with accuracy and with the possibility to easily analyze the distortion when varying any of the circuit or device parameters.
AB - The analysis of harmonic distortion is of prime importance for the analog and mixed integrated circuits. Recently we presented a new integral function method (IFM), based on a completely new principle, which allows the calculation of harmonic distortion using the DC output characteristic of devices or circuits. In this work we complement the integral function method to provide direct calculation of the following distortion figures: total harmonic distortion (THD), second harmonic distortion (HD2) and third harmonic distortion (HD3), voltage intercept points (VIP) and the intermodulation distortion (IMD). The comparison with the same distortion figures calculated by the Fourier coefficients (FC), by direct AC measurements and from FFT in simulators, indicates that results obtained by IFM give an excellent agreement in the full range of the analyzed active regions. The IFM combines simplicity and computer efficiency with accuracy and with the possibility to easily analyze the distortion when varying any of the circuit or device parameters.
KW - Amplifiers
KW - Analog circuits
KW - Harmonic distortion
KW - Integral function method
KW - Intermodulation distortion
KW - MOSFET
KW - Voltage intercept points
UR - http://www.scopus.com/inward/record.url?scp=4544340565&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2004.06.001
DO - 10.1016/j.sse.2004.06.001
M3 - Artículo
SN - 0038-1101
VL - 48
SP - 2225
EP - 2234
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 12
ER -