Injection-enhanced transformation of luminescence spectra of green GaP:N light-emitting diodes

Complex kinetics of the injection-enhanced change of the GaP:N LED emitting power and transformation of luminescence and DLTS spectra were investigated. It is shown that injection-enhanced processes in GaP:N LED's includes: a) the interstitial defects (Zn_i) diffusion from the highly doped layer near the contact into the active layer; b) the relief of stresses due to the arising of a dislocation network and the generation of point defects (vacancies antisites); c) diffusion of the impurity atoms via the vacancies which leads to dissociation of the nitrogen atom complexes (NN _i ).