Injection-enhanced transformation of luminescence spectra of green GaP:N light-emitting diodes

T. V. Torchinskaya

doi:10.1007/BF02660406

Injection-enhanced transformation of luminescence spectra of green GaP:N light-emitting diodes

T. V. Torchinskaya

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Complex kinetics of the injection-enhanced change of the GaP:N LED emitting power and transformation of luminescence and DLTS spectra were investigated. It is shown that injection-enhanced processes in GaP:N LED's includes: a) the interstitial defects (Zn_i) diffusion from the highly doped layer near the contact into the active layer; b) the relief of stresses due to the arising of a dislocation network and the generation of point defects (vacancies antisites); c) diffusion of the impurity atoms via the vacancies which leads to dissociation of the nitrogen atom complexes (NN_i ).

Original language	English
Pages (from-to)	423-429
Number of pages	7
Journal	Journal of Electronic Materials
Volume	21
Issue number	4
DOIs	https://doi.org/10.1007/BF02660406
State	Published - Apr 1992
Externally published	Yes

Keywords

DLTS spectra
Diffusion
GaP:N
Interstitial defects

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10.1007/BF02660406

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title = "Injection-enhanced transformation of luminescence spectra of green GaP:N light-emitting diodes",

abstract = "Complex kinetics of the injection-enhanced change of the GaP:N LED emitting power and transformation of luminescence and DLTS spectra were investigated. It is shown that injection-enhanced processes in GaP:N LED's includes: a) the interstitial defects (Zni) diffusion from the highly doped layer near the contact into the active layer; b) the relief of stresses due to the arising of a dislocation network and the generation of point defects (vacancies antisites); c) diffusion of the impurity atoms via the vacancies which leads to dissociation of the nitrogen atom complexes (NN i ).",

keywords = "DLTS spectra, Diffusion, GaP:N, Interstitial defects",

author = "Torchinskaya, {T. V.}",

year = "1992",

month = apr,

doi = "10.1007/BF02660406",

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T1 - Injection-enhanced transformation of luminescence spectra of green GaP:N light-emitting diodes

AU - Torchinskaya, T. V.

PY - 1992/4

Y1 - 1992/4

N2 - Complex kinetics of the injection-enhanced change of the GaP:N LED emitting power and transformation of luminescence and DLTS spectra were investigated. It is shown that injection-enhanced processes in GaP:N LED's includes: a) the interstitial defects (Zni) diffusion from the highly doped layer near the contact into the active layer; b) the relief of stresses due to the arising of a dislocation network and the generation of point defects (vacancies antisites); c) diffusion of the impurity atoms via the vacancies which leads to dissociation of the nitrogen atom complexes (NN i ).

AB - Complex kinetics of the injection-enhanced change of the GaP:N LED emitting power and transformation of luminescence and DLTS spectra were investigated. It is shown that injection-enhanced processes in GaP:N LED's includes: a) the interstitial defects (Zni) diffusion from the highly doped layer near the contact into the active layer; b) the relief of stresses due to the arising of a dislocation network and the generation of point defects (vacancies antisites); c) diffusion of the impurity atoms via the vacancies which leads to dissociation of the nitrogen atom complexes (NN i ).

KW - DLTS spectra

KW - Diffusion

KW - GaP:N

KW - Interstitial defects

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U2 - 10.1007/BF02660406

DO - 10.1007/BF02660406

M3 - Artículo

SN - 0361-5235

VL - 21

SP - 423

EP - 429

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Injection-enhanced transformation of luminescence spectra of green GaP:N light-emitting diodes

Abstract

Keywords

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