Influence of the indium nominal concentration in the formation of CuInS2 films grown by CBD

F. De Moure-Flores; A. Guillén-Cervantes; E. Campos-González; J. Santoyo-Salazar; J. S. Arias-Cerón; J. Santos-Cruz; S. A. Mayén-Hernández; M. De La L. Olvera; J. G. Mendoza-Álvarez; O. Zelaya-Angel; G. Contreras-Puente

doi:10.1016/j.mssp.2015.06.053

Influence of the indium nominal concentration in the formation of CuInS₂ films grown by CBD

F. De Moure-Flores, A. Guillén-Cervantes, E. Campos-González, J. Santoyo-Salazar, J. S. Arias-Cerón, J. Santos-Cruz, S. A. Mayén-Hernández, M. De La L. Olvera, J. G. Mendoza-Álvarez, O. Zelaya-Angel, G. Contreras-Puente

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

7 Citas (Scopus)

Resumen

Copper indium disulfide (CuInS₂) thin films were prepared by chemical bath deposition in an acid medium on glass substrates. CuInS₂ films were grown using CuSO₄, InCl₃ and C₂H₅NS as copper, indium and sulfur sources, respectively. The CuSO₄ and C₂H₅NS concentrations remained constant, while the InCl₃ concentration was varied from 0.002 M to 0.025 M. The structural analysis show that initially the films have a mixture of CuS and CuInS₂ phases, when the indium nominal concentration increases the formation of CuInS₂ ternary compound was promoted until the final formation of a CuInS₂ film. The morphological study shows that the surface of CuInS₂ films is constituted by nanotubes. The structural and compositional analysis show that for 0.025 M InCl₃ concentration CuInS₂ films were obtained.

Idioma original	Inglés
Páginas (desde-hasta)	755-759
Número de páginas	5
Publicación	Materials Science in Semiconductor Processing
Volumen	39
DOI	https://doi.org/10.1016/j.mssp.2015.06.053
Estado	Publicada - 10 jul. 2015

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10.1016/j.mssp.2015.06.053

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De Moure-Flores, F., Guillén-Cervantes, A., Campos-González, E., Santoyo-Salazar, J., Arias-Cerón, J. S., Santos-Cruz, J., Mayén-Hernández, S. A., Olvera, M. D. L. L., Mendoza-Álvarez, J. G., Zelaya-Angel, O., & Contreras-Puente, G. (2015). Influence of the indium nominal concentration in the formation of CuInS₂ films grown by CBD. Materials Science in Semiconductor Processing, 39, 755-759. https://doi.org/10.1016/j.mssp.2015.06.053

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title = "Influence of the indium nominal concentration in the formation of CuInS2 films grown by CBD",

abstract = "Copper indium disulfide (CuInS2) thin films were prepared by chemical bath deposition in an acid medium on glass substrates. CuInS2 films were grown using CuSO4, InCl3 and C2H5NS as copper, indium and sulfur sources, respectively. The CuSO4 and C2H5NS concentrations remained constant, while the InCl3 concentration was varied from 0.002 M to 0.025 M. The structural analysis show that initially the films have a mixture of CuS and CuInS2 phases, when the indium nominal concentration increases the formation of CuInS2 ternary compound was promoted until the final formation of a CuInS2 film. The morphological study shows that the surface of CuInS2 films is constituted by nanotubes. The structural and compositional analysis show that for 0.025 M InCl3 concentration CuInS2 films were obtained.",

keywords = "Chemical bath deposition, CuInS films, CuInS nanotubes, PL at room temperature",

author = "{De Moure-Flores}, F. and A. Guill{\'e}n-Cervantes and E. Campos-Gonz{\'a}lez and J. Santoyo-Salazar and Arias-Cer{\'o}n, {J. S.} and J. Santos-Cruz and May{\'e}n-Hern{\'a}ndez, {S. A.} and Olvera, {M. De La L.} and Mendoza-{\'A}lvarez, {J. G.} and O. Zelaya-Angel and G. Contreras-Puente",

year = "2015",

month = jul,

day = "10",

doi = "10.1016/j.mssp.2015.06.053",

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De Moure-Flores, F, Guillén-Cervantes, A, Campos-González, E, Santoyo-Salazar, J, Arias-Cerón, JS, Santos-Cruz, J, Mayén-Hernández, SA, Olvera, MDLL, Mendoza-Álvarez, JG, Zelaya-Angel, O & Contreras-Puente, G 2015, 'Influence of the indium nominal concentration in the formation of CuInS₂ films grown by CBD', Materials Science in Semiconductor Processing, vol. 39, pp. 755-759. https://doi.org/10.1016/j.mssp.2015.06.053

TY - JOUR

T1 - Influence of the indium nominal concentration in the formation of CuInS2 films grown by CBD

AU - De Moure-Flores, F.

AU - Guillén-Cervantes, A.

AU - Campos-González, E.

AU - Santoyo-Salazar, J.

AU - Arias-Cerón, J. S.

AU - Santos-Cruz, J.

AU - Mayén-Hernández, S. A.

AU - Olvera, M. De La L.

AU - Mendoza-Álvarez, J. G.

AU - Zelaya-Angel, O.

AU - Contreras-Puente, G.

PY - 2015/7/10

Y1 - 2015/7/10

N2 - Copper indium disulfide (CuInS2) thin films were prepared by chemical bath deposition in an acid medium on glass substrates. CuInS2 films were grown using CuSO4, InCl3 and C2H5NS as copper, indium and sulfur sources, respectively. The CuSO4 and C2H5NS concentrations remained constant, while the InCl3 concentration was varied from 0.002 M to 0.025 M. The structural analysis show that initially the films have a mixture of CuS and CuInS2 phases, when the indium nominal concentration increases the formation of CuInS2 ternary compound was promoted until the final formation of a CuInS2 film. The morphological study shows that the surface of CuInS2 films is constituted by nanotubes. The structural and compositional analysis show that for 0.025 M InCl3 concentration CuInS2 films were obtained.

AB - Copper indium disulfide (CuInS2) thin films were prepared by chemical bath deposition in an acid medium on glass substrates. CuInS2 films were grown using CuSO4, InCl3 and C2H5NS as copper, indium and sulfur sources, respectively. The CuSO4 and C2H5NS concentrations remained constant, while the InCl3 concentration was varied from 0.002 M to 0.025 M. The structural analysis show that initially the films have a mixture of CuS and CuInS2 phases, when the indium nominal concentration increases the formation of CuInS2 ternary compound was promoted until the final formation of a CuInS2 film. The morphological study shows that the surface of CuInS2 films is constituted by nanotubes. The structural and compositional analysis show that for 0.025 M InCl3 concentration CuInS2 films were obtained.

KW - Chemical bath deposition

KW - CuInS films

KW - CuInS nanotubes

KW - PL at room temperature

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U2 - 10.1016/j.mssp.2015.06.053

DO - 10.1016/j.mssp.2015.06.053

M3 - Artículo

SN - 1369-8001

VL - 39

SP - 755

EP - 759

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -