TY - JOUR
T1 - Influence of the indium nominal concentration in the formation of CuInS2 films grown by CBD
AU - De Moure-Flores, F.
AU - Guillén-Cervantes, A.
AU - Campos-González, E.
AU - Santoyo-Salazar, J.
AU - Arias-Cerón, J. S.
AU - Santos-Cruz, J.
AU - Mayén-Hernández, S. A.
AU - Olvera, M. De La L.
AU - Mendoza-Álvarez, J. G.
AU - Zelaya-Angel, O.
AU - Contreras-Puente, G.
N1 - Publisher Copyright:
© 2015 Elsevier Ltd. All rights reserved.
PY - 2015/7/10
Y1 - 2015/7/10
N2 - Copper indium disulfide (CuInS2) thin films were prepared by chemical bath deposition in an acid medium on glass substrates. CuInS2 films were grown using CuSO4, InCl3 and C2H5NS as copper, indium and sulfur sources, respectively. The CuSO4 and C2H5NS concentrations remained constant, while the InCl3 concentration was varied from 0.002 M to 0.025 M. The structural analysis show that initially the films have a mixture of CuS and CuInS2 phases, when the indium nominal concentration increases the formation of CuInS2 ternary compound was promoted until the final formation of a CuInS2 film. The morphological study shows that the surface of CuInS2 films is constituted by nanotubes. The structural and compositional analysis show that for 0.025 M InCl3 concentration CuInS2 films were obtained.
AB - Copper indium disulfide (CuInS2) thin films were prepared by chemical bath deposition in an acid medium on glass substrates. CuInS2 films were grown using CuSO4, InCl3 and C2H5NS as copper, indium and sulfur sources, respectively. The CuSO4 and C2H5NS concentrations remained constant, while the InCl3 concentration was varied from 0.002 M to 0.025 M. The structural analysis show that initially the films have a mixture of CuS and CuInS2 phases, when the indium nominal concentration increases the formation of CuInS2 ternary compound was promoted until the final formation of a CuInS2 film. The morphological study shows that the surface of CuInS2 films is constituted by nanotubes. The structural and compositional analysis show that for 0.025 M InCl3 concentration CuInS2 films were obtained.
KW - Chemical bath deposition
KW - CuInS films
KW - CuInS nanotubes
KW - PL at room temperature
UR - http://www.scopus.com/inward/record.url?scp=84936761080&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2015.06.053
DO - 10.1016/j.mssp.2015.06.053
M3 - Artículo
SN - 1369-8001
VL - 39
SP - 755
EP - 759
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -