Influence of nonequilibrium temperature and charge carriers on the ohm's law in a bipolar semiconductor

Yuri G. Gurevich, Igor Lashkevych

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

1 Cita (Scopus)

Resumen

The linear electrical conductivity of a bipolar semiconductor which is connected to a metal from both sides is investigated in general case, i.e., when the influence of both nonequilibrium charge carriers (electrons and holes) and nonequilibrium temperature on transport of electrical charges is taken into account. Let us notice that the electrical and energy nonequilibriums arise automatically in a bipolar semiconductor when electrical current flows even in a linear approximation with respect to an electrical current. The expression for the electrical conductivity is obtained for a bipolar semiconductor which depends on the electrical conductivity of electrons and holes, the thermal conductivity, the bandgap, the lifetime of charge carriers, the surface recombination rate on a semiconductor-metal contact.

Idioma originalInglés
Título de la publicación alojada2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781479962310
DOI
EstadoPublicada - 2014
Evento2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014 - Ciudad del Carmen, México
Duración: 29 sep. 20143 oct. 2014

Serie de la publicación

Nombre2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014

Conferencia

Conferencia2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014
País/TerritorioMéxico
CiudadCiudad del Carmen
Período29/09/143/10/14

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