Influence of nonequilibrium temperature and charge carriers on the ohm's law in a bipolar semiconductor

Yuri G. Gurevich; Igor Lashkevych

doi:10.1109/ICEEE.2014.6978262

Influence of nonequilibrium temperature and charge carriers on the ohm's law in a bipolar semiconductor

Yuri G. Gurevich, Igor Lashkevych

Unidad Profesional Interdisciplinaria de Ingeniería y Tecnologías Avanzadas (UPIITA)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The linear electrical conductivity of a bipolar semiconductor which is connected to a metal from both sides is investigated in general case, i.e., when the influence of both nonequilibrium charge carriers (electrons and holes) and nonequilibrium temperature on transport of electrical charges is taken into account. Let us notice that the electrical and energy nonequilibriums arise automatically in a bipolar semiconductor when electrical current flows even in a linear approximation with respect to an electrical current. The expression for the electrical conductivity is obtained for a bipolar semiconductor which depends on the electrical conductivity of electrons and holes, the thermal conductivity, the bandgap, the lifetime of charge carriers, the surface recombination rate on a semiconductor-metal contact.

Original language	English
Title of host publication	2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479962310
DOIs	https://doi.org/10.1109/ICEEE.2014.6978262
State	Published - 2014
Event	2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014 - Ciudad del Carmen, Mexico Duration: 29 Sep 2014 → 3 Oct 2014

Publication series

Name	2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014

Conference

Conference	2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014
Country/Territory	Mexico
City	Ciudad del Carmen
Period	29/09/14 → 3/10/14

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10.1109/ICEEE.2014.6978262

Cite this

Gurevich, Y. G., & Lashkevych, I. (2014). Influence of nonequilibrium temperature and charge carriers on the ohm's law in a bipolar semiconductor. In 2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014 Article 6978262 (2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEEE.2014.6978262

Gurevich, Yuri G. ; Lashkevych, Igor. / Influence of nonequilibrium temperature and charge carriers on the ohm's law in a bipolar semiconductor. 2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014).

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abstract = "The linear electrical conductivity of a bipolar semiconductor which is connected to a metal from both sides is investigated in general case, i.e., when the influence of both nonequilibrium charge carriers (electrons and holes) and nonequilibrium temperature on transport of electrical charges is taken into account. Let us notice that the electrical and energy nonequilibriums arise automatically in a bipolar semiconductor when electrical current flows even in a linear approximation with respect to an electrical current. The expression for the electrical conductivity is obtained for a bipolar semiconductor which depends on the electrical conductivity of electrons and holes, the thermal conductivity, the bandgap, the lifetime of charge carriers, the surface recombination rate on a semiconductor-metal contact.",

author = "Gurevich, {Yuri G.} and Igor Lashkevych",

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Gurevich, YG & Lashkevych, I 2014, Influence of nonequilibrium temperature and charge carriers on the ohm's law in a bipolar semiconductor. in 2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014., 6978262, 2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014, Institute of Electrical and Electronics Engineers Inc., 2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014, Ciudad del Carmen, Mexico, 29/09/14. https://doi.org/10.1109/ICEEE.2014.6978262

Influence of nonequilibrium temperature and charge carriers on the ohm's law in a bipolar semiconductor. / Gurevich, Yuri G.; Lashkevych, Igor.
2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 6978262 (2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The linear electrical conductivity of a bipolar semiconductor which is connected to a metal from both sides is investigated in general case, i.e., when the influence of both nonequilibrium charge carriers (electrons and holes) and nonequilibrium temperature on transport of electrical charges is taken into account. Let us notice that the electrical and energy nonequilibriums arise automatically in a bipolar semiconductor when electrical current flows even in a linear approximation with respect to an electrical current. The expression for the electrical conductivity is obtained for a bipolar semiconductor which depends on the electrical conductivity of electrons and holes, the thermal conductivity, the bandgap, the lifetime of charge carriers, the surface recombination rate on a semiconductor-metal contact.

AB - The linear electrical conductivity of a bipolar semiconductor which is connected to a metal from both sides is investigated in general case, i.e., when the influence of both nonequilibrium charge carriers (electrons and holes) and nonequilibrium temperature on transport of electrical charges is taken into account. Let us notice that the electrical and energy nonequilibriums arise automatically in a bipolar semiconductor when electrical current flows even in a linear approximation with respect to an electrical current. The expression for the electrical conductivity is obtained for a bipolar semiconductor which depends on the electrical conductivity of electrons and holes, the thermal conductivity, the bandgap, the lifetime of charge carriers, the surface recombination rate on a semiconductor-metal contact.

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Gurevich YG, Lashkevych I. Influence of nonequilibrium temperature and charge carriers on the ohm's law in a bipolar semiconductor. In 2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 6978262. (2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014). doi: 10.1109/ICEEE.2014.6978262

Influence of nonequilibrium temperature and charge carriers on the ohm's law in a bipolar semiconductor

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