Influence of dislocations on excitonic and DA luminescence spectra in GaP epitaxial layers

Nadezda Korsunskaya; Tatiana Torchinskaya; Vladimir Kooshnirenko

Influence of dislocations on excitonic and DA luminescence spectra in GaP epitaxial layers

Nadezda Korsunskaya, Tatiana Torchinskaya, Vladimir Kooshnirenko

Producción científica: Contribución a una conferencia › Artículo › revisión exhaustiva

Resumen

In this paper the influence of dislocations on the excitonic and donor-acceptor (DA) luminescence spectra of p⁺⁺ layers of GaP:N p⁺⁺-p⁺-n-n⁺ light-emitting diodes and structures has been studied experimentally. The appearance of dislocations is shown to be associated with a high level of layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their phononic replicas, and also the appearance of a new defects - NN₂ complexes and isolated N atoms.

Idioma original	Inglés
Páginas	363-366
Número de páginas	4
Estado	Publicada - 1999
Publicado de forma externa	Sí
Evento	Proceedings of the 1999 International Semiconductor Conference (CAS '99) - Sinaia, Romania Duración: 5 oct. 1999 → 9 oct. 1999

Conferencia

Conferencia	Proceedings of the 1999 International Semiconductor Conference (CAS '99)
Ciudad	Sinaia, Romania
Período	5/10/99 → 9/10/99

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@conference{efd6fe4ce5ef4782a0165db634be69bf,

title = "Influence of dislocations on excitonic and DA luminescence spectra in GaP epitaxial layers",

abstract = "In this paper the influence of dislocations on the excitonic and donor-acceptor (DA) luminescence spectra of p++ layers of GaP:N p++-p+-n-n+ light-emitting diodes and structures has been studied experimentally. The appearance of dislocations is shown to be associated with a high level of layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their phononic replicas, and also the appearance of a new defects - NN2 complexes and isolated N atoms.",

author = "Nadezda Korsunskaya and Tatiana Torchinskaya and Vladimir Kooshnirenko",

year = "1999",

language = "Ingl{\'e}s",

pages = "363--366",

note = "Proceedings of the 1999 International Semiconductor Conference (CAS '99) ; Conference date: 05-10-1999 Through 09-10-1999",

}

Influence of dislocations on excitonic and DA luminescence spectra in GaP epitaxial layers. / Korsunskaya, Nadezda; Torchinskaya, Tatiana; Kooshnirenko, Vladimir.
1999. 363-366 Papel presentado en Proceedings of the 1999 International Semiconductor Conference (CAS '99), Sinaia, Romania.

Producción científica: Contribución a una conferencia › Artículo › revisión exhaustiva

TY - CONF

T1 - Influence of dislocations on excitonic and DA luminescence spectra in GaP epitaxial layers

AU - Korsunskaya, Nadezda

AU - Torchinskaya, Tatiana

AU - Kooshnirenko, Vladimir

PY - 1999

Y1 - 1999

N2 - In this paper the influence of dislocations on the excitonic and donor-acceptor (DA) luminescence spectra of p++ layers of GaP:N p++-p+-n-n+ light-emitting diodes and structures has been studied experimentally. The appearance of dislocations is shown to be associated with a high level of layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their phononic replicas, and also the appearance of a new defects - NN2 complexes and isolated N atoms.

AB - In this paper the influence of dislocations on the excitonic and donor-acceptor (DA) luminescence spectra of p++ layers of GaP:N p++-p+-n-n+ light-emitting diodes and structures has been studied experimentally. The appearance of dislocations is shown to be associated with a high level of layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their phononic replicas, and also the appearance of a new defects - NN2 complexes and isolated N atoms.

UR - http://www.scopus.com/inward/record.url?scp=0033324275&partnerID=8YFLogxK

M3 - Artículo

SP - 363

EP - 366

T2 - Proceedings of the 1999 International Semiconductor Conference (CAS '99)

Y2 - 5 October 1999 through 9 October 1999

ER -

Influence of dislocations on excitonic and DA luminescence spectra in GaP epitaxial layers

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