Abstract
In this paper the influence of dislocations on the excitonic and donor-acceptor (DA) luminescence spectra of p++ layers of GaP:N p++-p+-n-n+ light-emitting diodes and structures has been studied experimentally. The appearance of dislocations is shown to be associated with a high level of layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their phononic replicas, and also the appearance of a new defects - NN2 complexes and isolated N atoms.
Original language | English |
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Pages | 363-366 |
Number of pages | 4 |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 International Semiconductor Conference (CAS '99) - Sinaia, Romania Duration: 5 Oct 1999 → 9 Oct 1999 |
Conference
Conference | Proceedings of the 1999 International Semiconductor Conference (CAS '99) |
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City | Sinaia, Romania |
Period | 5/10/99 → 9/10/99 |