Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

D. M. Hurtado-Castañeda; J. L. Herrera-Pérez; J. S. Arias-Cerón; C. Reyes-Betanzo; P. Rodriguez-Fragoso; J. G. Mendoza-Álvarez

doi:10.1016/j.mssp.2014.11.023

Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

D. M. Hurtado-Castañeda, J. L. Herrera-Pérez, J. S. Arias-Cerón, C. Reyes-Betanzo, P. Rodriguez-Fragoso, J. G. Mendoza-Álvarez

Unidad Profesional Interdisciplinaria de Ingeniería y Tecnologías Avanzadas (UPIITA)

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4 Citas (Scopus)

Resumen

Current-voltage (I-V) and R₀A curves and spectral response as a function of bias voltage and temperature of p-n indium gallium arsenide antimonide (In_0.14Ga_0.86As_0.13Sb_0.87)/n-GaSb photodiodes are presented. InGaAsSb quaternary alloys with a bandgap energy of about 653 meV were grown using the liquid phase epitaxy technique on top of (100) GaSb substrates. Device structure was fabricated using a process that includes passivation with sodium sulfide, thermal annealing and metallizations. The diode architecture was a back-illuminated (B-I) structure with a ring-shaped metallic contact in the GaSb substrate face. Photodiode spectral response showed good performance in the entire temperature range between 20 K and 300 K.

Idioma original	Inglés
Páginas (desde-hasta)	52-55
Número de páginas	4
Publicación	Materials Science in Semiconductor Processing
Volumen	31
DOI	https://doi.org/10.1016/j.mssp.2014.11.023
Estado	Publicada - mar. 2015

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Hurtado-Castañeda, D. M., Herrera-Pérez, J. L., Arias-Cerón, J. S., Reyes-Betanzo, C., Rodriguez-Fragoso, P., & Mendoza-Álvarez, J. G. (2015). Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response. Materials Science in Semiconductor Processing, 31, 52-55. https://doi.org/10.1016/j.mssp.2014.11.023

@article{3a5d0ef3ae1040b595aa6039ff9c68c2,

title = "Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response",

abstract = "Current-voltage (I-V) and R0A curves and spectral response as a function of bias voltage and temperature of p-n indium gallium arsenide antimonide (In0.14Ga0.86As0.13Sb0.87)/n-GaSb photodiodes are presented. InGaAsSb quaternary alloys with a bandgap energy of about 653 meV were grown using the liquid phase epitaxy technique on top of (100) GaSb substrates. Device structure was fabricated using a process that includes passivation with sodium sulfide, thermal annealing and metallizations. The diode architecture was a back-illuminated (B-I) structure with a ring-shaped metallic contact in the GaSb substrate face. Photodiode spectral response showed good performance in the entire temperature range between 20 K and 300 K.",

keywords = "InGaAsSb semiconductors, Infrared photodetectors, Photodiode electrical characterization, Photodiode spectral response",

author = "Hurtado-Casta{\~n}eda, {D. M.} and Herrera-P{\'e}rez, {J. L.} and Arias-Cer{\'o}n, {J. S.} and C. Reyes-Betanzo and P. Rodriguez-Fragoso and Mendoza-{\'A}lvarez, {J. G.}",

year = "2015",

month = mar,

doi = "10.1016/j.mssp.2014.11.023",

language = "Ingl{\'e}s",

volume = "31",

pages = "52--55",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}

Hurtado-Castañeda, DM, Herrera-Pérez, JL, Arias-Cerón, JS, Reyes-Betanzo, C, Rodriguez-Fragoso, P & Mendoza-Álvarez, JG 2015, 'Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response', Materials Science in Semiconductor Processing, vol. 31, pp. 52-55. https://doi.org/10.1016/j.mssp.2014.11.023

Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response. / Hurtado-Castañeda, D. M.; Herrera-Pérez, J. L.; Arias-Cerón, J. S. et al.
En: Materials Science in Semiconductor Processing, Vol. 31, 03.2015, p. 52-55.

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

TY - JOUR

T1 - Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy

T2 - Electrical characterization and optical response

AU - Hurtado-Castañeda, D. M.

AU - Herrera-Pérez, J. L.

AU - Arias-Cerón, J. S.

AU - Reyes-Betanzo, C.

AU - Rodriguez-Fragoso, P.

AU - Mendoza-Álvarez, J. G.

PY - 2015/3

Y1 - 2015/3

N2 - Current-voltage (I-V) and R0A curves and spectral response as a function of bias voltage and temperature of p-n indium gallium arsenide antimonide (In0.14Ga0.86As0.13Sb0.87)/n-GaSb photodiodes are presented. InGaAsSb quaternary alloys with a bandgap energy of about 653 meV were grown using the liquid phase epitaxy technique on top of (100) GaSb substrates. Device structure was fabricated using a process that includes passivation with sodium sulfide, thermal annealing and metallizations. The diode architecture was a back-illuminated (B-I) structure with a ring-shaped metallic contact in the GaSb substrate face. Photodiode spectral response showed good performance in the entire temperature range between 20 K and 300 K.

AB - Current-voltage (I-V) and R0A curves and spectral response as a function of bias voltage and temperature of p-n indium gallium arsenide antimonide (In0.14Ga0.86As0.13Sb0.87)/n-GaSb photodiodes are presented. InGaAsSb quaternary alloys with a bandgap energy of about 653 meV were grown using the liquid phase epitaxy technique on top of (100) GaSb substrates. Device structure was fabricated using a process that includes passivation with sodium sulfide, thermal annealing and metallizations. The diode architecture was a back-illuminated (B-I) structure with a ring-shaped metallic contact in the GaSb substrate face. Photodiode spectral response showed good performance in the entire temperature range between 20 K and 300 K.

KW - InGaAsSb semiconductors

KW - Infrared photodetectors

KW - Photodiode electrical characterization

KW - Photodiode spectral response

UR - http://www.scopus.com/inward/record.url?scp=84919359395&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2014.11.023

DO - 10.1016/j.mssp.2014.11.023

M3 - Artículo

SN - 1369-8001

VL - 31

SP - 52

EP - 55

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

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