TY - JOUR
T1 - Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy
T2 - Electrical characterization and optical response
AU - Hurtado-Castañeda, D. M.
AU - Herrera-Pérez, J. L.
AU - Arias-Cerón, J. S.
AU - Reyes-Betanzo, C.
AU - Rodriguez-Fragoso, P.
AU - Mendoza-Álvarez, J. G.
N1 - Publisher Copyright:
© 2014 Elsevier Ltd. All rights reserved.
PY - 2015/3
Y1 - 2015/3
N2 - Current-voltage (I-V) and R0A curves and spectral response as a function of bias voltage and temperature of p-n indium gallium arsenide antimonide (In0.14Ga0.86As0.13Sb0.87)/n-GaSb photodiodes are presented. InGaAsSb quaternary alloys with a bandgap energy of about 653 meV were grown using the liquid phase epitaxy technique on top of (100) GaSb substrates. Device structure was fabricated using a process that includes passivation with sodium sulfide, thermal annealing and metallizations. The diode architecture was a back-illuminated (B-I) structure with a ring-shaped metallic contact in the GaSb substrate face. Photodiode spectral response showed good performance in the entire temperature range between 20 K and 300 K.
AB - Current-voltage (I-V) and R0A curves and spectral response as a function of bias voltage and temperature of p-n indium gallium arsenide antimonide (In0.14Ga0.86As0.13Sb0.87)/n-GaSb photodiodes are presented. InGaAsSb quaternary alloys with a bandgap energy of about 653 meV were grown using the liquid phase epitaxy technique on top of (100) GaSb substrates. Device structure was fabricated using a process that includes passivation with sodium sulfide, thermal annealing and metallizations. The diode architecture was a back-illuminated (B-I) structure with a ring-shaped metallic contact in the GaSb substrate face. Photodiode spectral response showed good performance in the entire temperature range between 20 K and 300 K.
KW - InGaAsSb semiconductors
KW - Infrared photodetectors
KW - Photodiode electrical characterization
KW - Photodiode spectral response
UR - http://www.scopus.com/inward/record.url?scp=84919359395&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2014.11.023
DO - 10.1016/j.mssp.2014.11.023
M3 - Artículo
SN - 1369-8001
VL - 31
SP - 52
EP - 55
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -