IGBT fault diagnosis using adaptive thresholds during the turn-on transient

M. A. Rodriguez-Blanco, A. Vazquez-Perez, L. Hernandez-Gonzalez, A. Pech-Carbonell, M. May-Alarcon

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

6 Citas (Scopus)

Resumen

This paper presents the design of an electronic fault detection circuit in the insulated gate bipolar transistor (IGBT) based on the exclusive measurement of the gate signal during the turn-on transient. In order to increase the effectiveness of the detection and to tolerate the variations of input to system, adaptable thresholds have been added to the circuit. There are three important aspects in this research, specifically: 1 - Early detection, since the evaluation is realized during the turn-on transient; 2 - Reducing false alarms, because the variations of input to the system are considered; 3 - A realistic design, since the components used are commercially available, and the IGBT model used is the standard for PSpice software which has already been widely validated in the literature.

Idioma originalInglés
Título de la publicación alojadaProceedings - 2013 9th IEEE International Symposium on Diagnostics for Electric Machines, Power Electronics and Drives, SDEMPED 2013
EditorialIEEE Computer Society
Páginas241-248
Número de páginas8
ISBN (versión impresa)9781479900251
DOI
EstadoPublicada - 2013
Evento2013 9th IEEE International Symposium on Diagnostics for Electric Machines, Power Electronics and Drives, SDEMPED 2013 - Valencia, Espana
Duración: 27 ago. 201330 ago. 2013

Serie de la publicación

NombreProceedings - 2013 9th IEEE International Symposium on Diagnostics for Electric Machines, Power Electronics and Drives, SDEMPED 2013

Conferencia

Conferencia2013 9th IEEE International Symposium on Diagnostics for Electric Machines, Power Electronics and Drives, SDEMPED 2013
País/TerritorioEspana
CiudadValencia
Período27/08/1330/08/13

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