Hydrogenated amorphous silicon as a binary alloy

J. Taguena-Martinez, R. A. Barrio, F. L. Castillo-Alvarado

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

7 Citas (Scopus)

Resumen

The method of Kittler and Falicov (1976, 1978) for binary alloys has been extended to the case when one of the components terminates the Bethe lattice. It has been applied to hydrogenated amorphous silicon (a-Si:H) and the results compared with experimental photo-emission spectra. It is shown that complex configurations such as SiH2 and SiH3 are responsible for some of the experimental peaks. This theory is compared with other mean-field theories and its limitations are fully discussed.

Idioma originalInglés
Páginas (desde-hasta)1679-1688
Número de páginas10
PublicaciónJournal of Physics C: Solid State Physics
Volumen20
N.º11
DOI
EstadoPublicada - 20 abr. 1987
Publicado de forma externa

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