Hydrogenated amorphous silicon as a binary alloy

J. Taguena-Martinez, R. A. Barrio, F. L. Castillo-Alvarado

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The method of Kittler and Falicov (1976, 1978) for binary alloys has been extended to the case when one of the components terminates the Bethe lattice. It has been applied to hydrogenated amorphous silicon (a-Si:H) and the results compared with experimental photo-emission spectra. It is shown that complex configurations such as SiH2 and SiH3 are responsible for some of the experimental peaks. This theory is compared with other mean-field theories and its limitations are fully discussed.

Original languageEnglish
Pages (from-to)1679-1688
Number of pages10
JournalJournal of Physics C: Solid State Physics
Volume20
Issue number11
DOIs
StatePublished - 20 Apr 1987
Externally publishedYes

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