Resumen
CeO2 films were prepared on amorphous silica substrates by laser chemical vapor deposition using cerium dipivaloylmethanate precursor and a semiconductor InGaAlAs (808 nm in wavelength) laser system. The laser spot size was about 20 mm, which was sufficient to cover the whole substrate. Highly (100)-oriented CeO2 films were obtained at extraordinary high deposition rates ranging from 60 to 132 μm/h. Films exhibited a columnar feather-like structure with a large number of nano-sized voids, and a surface morphology consisting of either nearly flat or pyramidal top-ending columns depending on the laser power. Nearly flat top-ending columns could be fairly (100)-oriented at the top and (111)-oriented laterally.
Idioma original | Inglés |
---|---|
Páginas (desde-hasta) | 1-4 |
Número de páginas | 4 |
Publicación | Thin Solid Films |
Volumen | 519 |
N.º | 1 |
DOI | |
Estado | Publicada - 29 oct. 2010 |
Publicado de forma externa | Sí |