Abstract
CeO2 films were prepared on amorphous silica substrates by laser chemical vapor deposition using cerium dipivaloylmethanate precursor and a semiconductor InGaAlAs (808 nm in wavelength) laser system. The laser spot size was about 20 mm, which was sufficient to cover the whole substrate. Highly (100)-oriented CeO2 films were obtained at extraordinary high deposition rates ranging from 60 to 132 μm/h. Films exhibited a columnar feather-like structure with a large number of nano-sized voids, and a surface morphology consisting of either nearly flat or pyramidal top-ending columns depending on the laser power. Nearly flat top-ending columns could be fairly (100)-oriented at the top and (111)-oriented laterally.
Original language | English |
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Pages (from-to) | 1-4 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 519 |
Issue number | 1 |
DOIs | |
State | Published - 29 Oct 2010 |
Externally published | Yes |
Keywords
- Cerium oxide
- Laser chemical vapor deposition
- Oriented films
- Transmission electron microscopy
- X-ray diffraction