Resumen
Ce 1 - xFe xO 2 - δ solid solution films were prepared on amorphous silica substrates by laser chemical vapor deposition using metal dipivaloylmethanate precursors and a semiconductor InGaAlAs (808 nm in wavelength) laser. X-ray diffraction revealed the formation of single Ce 1 - xFe xO 2 - δ phase at x ≤ 0.15, while CeO 2 and Fe 2O 3 phases were found for higher Fe content. Highly (100)-oriented Ce 1 - xFe xO 2 - δ (x = 0.02) films were obtained at laser power, P L = 50-200 W and deposition temperature, T dep = 800-1063 K. Lotgering factor (200) was calculated to be above 0.8 for films prepared at P L = 50-150 W. X-ray photoelectron spectroscopy revealed the presence of Fe 3+, Ce 4+ and Ce 3+ on solid solution films. Cross-sectional transmission electron microscope images disclosed a film columnar feather-like structure with a large number of nano-scale interspaces. Deposition rates were 2 or 3 orders of magnitude higher than those reported for conventional metal organic chemical vapor deposition of CeO 2.
Idioma original | Inglés |
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Páginas (desde-hasta) | 1851-1855 |
Número de páginas | 5 |
Publicación | Thin Solid Films |
Volumen | 520 |
N.º | 6 |
DOI | |
Estado | Publicada - 1 ene. 2012 |
Publicado de forma externa | Sí |