Abstract
Ce 1 - xFe xO 2 - δ solid solution films were prepared on amorphous silica substrates by laser chemical vapor deposition using metal dipivaloylmethanate precursors and a semiconductor InGaAlAs (808 nm in wavelength) laser. X-ray diffraction revealed the formation of single Ce 1 - xFe xO 2 - δ phase at x ≤ 0.15, while CeO 2 and Fe 2O 3 phases were found for higher Fe content. Highly (100)-oriented Ce 1 - xFe xO 2 - δ (x = 0.02) films were obtained at laser power, P L = 50-200 W and deposition temperature, T dep = 800-1063 K. Lotgering factor (200) was calculated to be above 0.8 for films prepared at P L = 50-150 W. X-ray photoelectron spectroscopy revealed the presence of Fe 3+, Ce 4+ and Ce 3+ on solid solution films. Cross-sectional transmission electron microscope images disclosed a film columnar feather-like structure with a large number of nano-scale interspaces. Deposition rates were 2 or 3 orders of magnitude higher than those reported for conventional metal organic chemical vapor deposition of CeO 2.
Original language | English |
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Pages (from-to) | 1851-1855 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 520 |
Issue number | 6 |
DOIs | |
State | Published - 1 Jan 2012 |
Externally published | Yes |
Keywords
- Ce-Fe oxide
- CeO
- Laser chemical vapor deposition
- Oriented films
- Solid solutions
- Transmission electron microscopy
- X-ray diffraction