High VOC Cu2ZnSnSe4/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction

Y. Sanchez; M. Neuschitzer; M. Dimitrievska; M. Espindola-Rodriguez; J. Lopez-Garcia; V. Izquierdo-Roca; O. Vigil-Galan; E. Saucedo

doi:10.1109/PVSC.2014.6924948

High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction

Título traducido de la contribución: Célula solar basada en Cu 2 ZnSnSe 4 /CdS:Cu de alto V OC: Evidencias de una heterounión de tipo metal-aislante-semiconductor (MIS)

Y. Sanchez, M. Neuschitzer, M. Dimitrievska, M. Espindola-Rodriguez, J. Lopez-Garcia, V. Izquierdo-Roca, O. Vigil-Galan, E. Saucedo

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

14 Citas (Scopus)

Resumen

In this work we report the Cu doping of chemical bath deposited CdS for the preparation of Cu₂ZnSnSe₄/CdS:Cu hetero-junction. We demonstrate that increasing the Cu concentration in the reaction bath several fundamental properties of CdS are changed (optical, crystalline, morphological), positively impacting in the resulting devices. The improvement of the efficiency from 1.6% to 6.1% is mainly explained by the large increases on V_OC, obtaining the higher voltage value reported to now in the literature for this hetero-junction. We propose the formation of a metal-insulator-semiconductor (MIS) type device to explain our experimental results, which opens the possibility to use the MIS structure to solve, at least in part, the voltage deficit problems of kesterites.

Título traducido de la contribución	Célula solar basada en Cu 2 ZnSnSe 4 /CdS:Cu de alto V OC: Evidencias de una heterounión de tipo metal-aislante-semiconductor (MIS)
Idioma original	Inglés
Título de la publicación alojada	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	417-420
Número de páginas	4
ISBN (versión digital)	978-147994398-2
DOI	https://doi.org/10.1109/PVSC.2014.6924948
Estado	Publicada - 15 oct. 2014
Evento	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, Estados Unidos Duración: 8 jun. 2014 → 13 jun. 2014

Serie de la publicación

Nombre	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conferencia

Conferencia	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
País/Territorio	Estados Unidos
Ciudad	Denver
Período	8/06/14 → 13/06/14

Palabras clave

compuestos de cobre
heterouniones
células fotovoltaicas
dopaje de dispositivos semiconductores
Dispositivos de película delgada

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

Acceder al documento

10.1109/PVSC.2014.6924948

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Sanchez, Y., Neuschitzer, M., Dimitrievska, M., Espindola-Rodriguez, M., Lopez-Garcia, J., Izquierdo-Roca, V., Vigil-Galan, O., & Saucedo, E. (2014). High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction. En 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 417-420). Artículo 6924948 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6924948

Sanchez, Y. ; Neuschitzer, M. ; Dimitrievska, M. et al. / High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell : Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 417-420 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

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abstract = "In this work we report the Cu doping of chemical bath deposited CdS for the preparation of Cu2ZnSnSe4/CdS:Cu hetero-junction. We demonstrate that increasing the Cu concentration in the reaction bath several fundamental properties of CdS are changed (optical, crystalline, morphological), positively impacting in the resulting devices. The improvement of the efficiency from 1.6% to 6.1% is mainly explained by the large increases on VOC, obtaining the higher voltage value reported to now in the literature for this hetero-junction. We propose the formation of a metal-insulator-semiconductor (MIS) type device to explain our experimental results, which opens the possibility to use the MIS structure to solve, at least in part, the voltage deficit problems of kesterites.",

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Sanchez, Y, Neuschitzer, M, Dimitrievska, M, Espindola-Rodriguez, M, Lopez-Garcia, J, Izquierdo-Roca, V, Vigil-Galan, O & Saucedo, E 2014, High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction. En 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6924948, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 417-420, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, Estados Unidos, 8/06/14. https://doi.org/10.1109/PVSC.2014.6924948

High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction. / Sanchez, Y.; Neuschitzer, M.; Dimitrievska, M. et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 417-420 6924948 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

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AU - Sanchez, Y.

AU - Neuschitzer, M.

AU - Dimitrievska, M.

AU - Espindola-Rodriguez, M.

AU - Lopez-Garcia, J.

AU - Izquierdo-Roca, V.

AU - Vigil-Galan, O.

AU - Saucedo, E.

PY - 2014/10/15

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N2 - In this work we report the Cu doping of chemical bath deposited CdS for the preparation of Cu2ZnSnSe4/CdS:Cu hetero-junction. We demonstrate that increasing the Cu concentration in the reaction bath several fundamental properties of CdS are changed (optical, crystalline, morphological), positively impacting in the resulting devices. The improvement of the efficiency from 1.6% to 6.1% is mainly explained by the large increases on VOC, obtaining the higher voltage value reported to now in the literature for this hetero-junction. We propose the formation of a metal-insulator-semiconductor (MIS) type device to explain our experimental results, which opens the possibility to use the MIS structure to solve, at least in part, the voltage deficit problems of kesterites.

AB - In this work we report the Cu doping of chemical bath deposited CdS for the preparation of Cu2ZnSnSe4/CdS:Cu hetero-junction. We demonstrate that increasing the Cu concentration in the reaction bath several fundamental properties of CdS are changed (optical, crystalline, morphological), positively impacting in the resulting devices. The improvement of the efficiency from 1.6% to 6.1% is mainly explained by the large increases on VOC, obtaining the higher voltage value reported to now in the literature for this hetero-junction. We propose the formation of a metal-insulator-semiconductor (MIS) type device to explain our experimental results, which opens the possibility to use the MIS structure to solve, at least in part, the voltage deficit problems of kesterites.

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KW - dopaje de dispositivos semiconductores

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Sanchez Y, Neuschitzer M, Dimitrievska M, Espindola-Rodriguez M, Lopez-Garcia J, Izquierdo-Roca V et al. High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction. En 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 417-420. 6924948. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6924948