High VOC Cu2ZnSnSe4/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction

Y. Sanchez; M. Neuschitzer; M. Dimitrievska; M. Espindola-Rodriguez; J. Lopez-Garcia; V. Izquierdo-Roca; O. Vigil-Galan; E. Saucedo

doi:10.1109/PVSC.2014.6924948

High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction

Y. Sanchez, M. Neuschitzer, M. Dimitrievska, M. Espindola-Rodriguez, J. Lopez-Garcia, V. Izquierdo-Roca, O. Vigil-Galan, E. Saucedo

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

14 Scopus citations

Abstract

In this work we report the Cu doping of chemical bath deposited CdS for the preparation of Cu₂ZnSnSe₄/CdS:Cu hetero-junction. We demonstrate that increasing the Cu concentration in the reaction bath several fundamental properties of CdS are changed (optical, crystalline, morphological), positively impacting in the resulting devices. The improvement of the efficiency from 1.6% to 6.1% is mainly explained by the large increases on V_OC, obtaining the higher voltage value reported to now in the literature for this hetero-junction. We propose the formation of a metal-insulator-semiconductor (MIS) type device to explain our experimental results, which opens the possibility to use the MIS structure to solve, at least in part, the voltage deficit problems of kesterites.

Translated title of the contribution	Célula solar basada en Cu 2 ZnSnSe 4 /CdS:Cu de alto V OC: Evidencias de una heterounión de tipo metal-aislante-semiconductor (MIS)
Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	417-420
Number of pages	4
ISBN (Electronic)	978-147994398-2
DOIs	https://doi.org/10.1109/PVSC.2014.6924948
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Keywords

Copper compounds
Heterojunctions
Photovoltaic cells
Semiconductor device doping
Thin film devices

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2014.6924948

Cite this

Sanchez, Y., Neuschitzer, M., Dimitrievska, M., Espindola-Rodriguez, M., Lopez-Garcia, J., Izquierdo-Roca, V., Vigil-Galan, O., & Saucedo, E. (2014). High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 417-420). Article 6924948 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6924948

Sanchez, Y. ; Neuschitzer, M. ; Dimitrievska, M. et al. / High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell : Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 417-420 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

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title = "High VOC Cu2ZnSnSe4/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction",

abstract = "In this work we report the Cu doping of chemical bath deposited CdS for the preparation of Cu2ZnSnSe4/CdS:Cu hetero-junction. We demonstrate that increasing the Cu concentration in the reaction bath several fundamental properties of CdS are changed (optical, crystalline, morphological), positively impacting in the resulting devices. The improvement of the efficiency from 1.6% to 6.1% is mainly explained by the large increases on VOC, obtaining the higher voltage value reported to now in the literature for this hetero-junction. We propose the formation of a metal-insulator-semiconductor (MIS) type device to explain our experimental results, which opens the possibility to use the MIS structure to solve, at least in part, the voltage deficit problems of kesterites.",

keywords = "Copper compounds, Heterojunctions, Photovoltaic cells, Semiconductor device doping, Thin film devices, compuestos de cobre, heterouniones, c{\'e}lulas fotovoltaicas, dopaje de dispositivos semiconductores, Dispositivos de pel{\'i}cula delgada",

author = "Y. Sanchez and M. Neuschitzer and M. Dimitrievska and M. Espindola-Rodriguez and J. Lopez-Garcia and V. Izquierdo-Roca and O. Vigil-Galan and E. Saucedo",

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Sanchez, Y, Neuschitzer, M, Dimitrievska, M, Espindola-Rodriguez, M, Lopez-Garcia, J, Izquierdo-Roca, V, Vigil-Galan, O & Saucedo, E 2014, High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6924948, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 417-420, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14. https://doi.org/10.1109/PVSC.2014.6924948

High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction. / Sanchez, Y.; Neuschitzer, M.; Dimitrievska, M. et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 417-420 6924948 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Neuschitzer, M.

AU - Dimitrievska, M.

AU - Espindola-Rodriguez, M.

AU - Lopez-Garcia, J.

AU - Izquierdo-Roca, V.

AU - Vigil-Galan, O.

AU - Saucedo, E.

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N2 - In this work we report the Cu doping of chemical bath deposited CdS for the preparation of Cu2ZnSnSe4/CdS:Cu hetero-junction. We demonstrate that increasing the Cu concentration in the reaction bath several fundamental properties of CdS are changed (optical, crystalline, morphological), positively impacting in the resulting devices. The improvement of the efficiency from 1.6% to 6.1% is mainly explained by the large increases on VOC, obtaining the higher voltage value reported to now in the literature for this hetero-junction. We propose the formation of a metal-insulator-semiconductor (MIS) type device to explain our experimental results, which opens the possibility to use the MIS structure to solve, at least in part, the voltage deficit problems of kesterites.

AB - In this work we report the Cu doping of chemical bath deposited CdS for the preparation of Cu2ZnSnSe4/CdS:Cu hetero-junction. We demonstrate that increasing the Cu concentration in the reaction bath several fundamental properties of CdS are changed (optical, crystalline, morphological), positively impacting in the resulting devices. The improvement of the efficiency from 1.6% to 6.1% is mainly explained by the large increases on VOC, obtaining the higher voltage value reported to now in the literature for this hetero-junction. We propose the formation of a metal-insulator-semiconductor (MIS) type device to explain our experimental results, which opens the possibility to use the MIS structure to solve, at least in part, the voltage deficit problems of kesterites.

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KW - Heterojunctions

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KW - Semiconductor device doping

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KW - dopaje de dispositivos semiconductores

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T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

SP - 417

EP - 420

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 8 June 2014 through 13 June 2014

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Sanchez Y, Neuschitzer M, Dimitrievska M, Espindola-Rodriguez M, Lopez-Garcia J, Izquierdo-Roca V et al. High V_OC Cu₂ZnSnSe₄/CdS:Cu based solar cell: Evidences of a metal-insulator-semiconductor (MIS) type hetero-junction. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 417-420. 6924948. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6924948