@inproceedings{025be3412707449596faaba96a3b0bed,
title = "High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET",
abstract = "100 nm T-gate Si/SiGe n-MODFETs are reported with new record fT of 76 GHz (105 GHz), and with fMAX of 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFmin of 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization.",
author = "F. Aniel and M. Enciso-Aguilar and L. Giguerre and P. Crozat and R. Adde and T. Mack and U. Seiler and Th Hackbarth and B. Raynor",
note = "Publisher Copyright: {\textcopyright} 2001 ISDRS-Univ of Maryland.; International Semiconductor Device Research Symposium, ISDRS 2001 ; Conference date: 05-12-2001 Through 07-12-2001",
year = "2001",
doi = "10.1109/ISDRS.2001.984551",
language = "Ingl{\'e}s",
series = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "482--485",
booktitle = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",
address = "Estados Unidos",
}