Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard

F. Hernandez-Marquez; Z. Rivera-Alvarez; A. Guillen-Cervantes; J. Huerta-Ruelas; Ivan C. Hernández; L. Zamora-Peredo; A. Lastras-Martinez; V. H. Méndez-García; M. Lopez-Lopez

doi:10.1109/ICEEE.2005.1529660

Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard

F. Hernandez-Marquez, Z. Rivera-Alvarez, A. Guillen-Cervantes, J. Huerta-Ruelas, Ivan C. Hernández, L. Zamora-Peredo, A. Lastras-Martinez, V. H. Méndez-García, M. Lopez-Lopez

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Resumen

The Quantum Hall Effect allows to the national metrology Institutes to reproduce the unit of resistance (ohm) in terms of physical constants. We have made efforts in order to develop AlGaAs/GaAs heterostructures with enough quality to be used in metrology as a resistance standard. The ohmic contacts in the samples is one of the most important aspects for metrology applications, therefore good contacts are essential in the analysis of the longitudinal resistance under dissipationless condition. Measurements at 1.3 K temperature, in magnetic fields up to 12 T were made, as required to obtain Quantum Hall Effect phenomenon. Our results show that the developed samples have low longitudinal resistance, comparable with those used at the mexican national metrology institute as reference standard of dc resistance. © 2005 IEEE.

Idioma original	Inglés estadounidense
Páginas	424-427
Número de páginas	4
DOI	https://doi.org/10.1109/ICEEE.2005.1529660
Estado	Publicada - 1 dic. 2005
Publicado de forma externa	Sí
Evento	2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005 - Duración: 1 dic. 2005 → …

Conferencia

Conferencia	2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005
Período	1/12/05 → …

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Hernandez-Marquez, F., Rivera-Alvarez, Z., Guillen-Cervantes, A., Huerta-Ruelas, J., Hernández, I. C., Zamora-Peredo, L., Lastras-Martinez, A., Méndez-García, V. H., & Lopez-Lopez, M. (2005). Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard. 424-427. Papel presentado en 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. https://doi.org/10.1109/ICEEE.2005.1529660

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title = "Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard",

abstract = "The Quantum Hall Effect allows to the national metrology Institutes to reproduce the unit of resistance (ohm) in terms of physical constants. We have made efforts in order to develop AlGaAs/GaAs heterostructures with enough quality to be used in metrology as a resistance standard. The ohmic contacts in the samples is one of the most important aspects for metrology applications, therefore good contacts are essential in the analysis of the longitudinal resistance under dissipationless condition. Measurements at 1.3 K temperature, in magnetic fields up to 12 T were made, as required to obtain Quantum Hall Effect phenomenon. Our results show that the developed samples have low longitudinal resistance, comparable with those used at the mexican national metrology institute as reference standard of dc resistance. {\textcopyright} 2005 IEEE.",

author = "F. Hernandez-Marquez and Z. Rivera-Alvarez and A. Guillen-Cervantes and J. Huerta-Ruelas and Hern{\'a}ndez, {Ivan C.} and L. Zamora-Peredo and A. Lastras-Martinez and M{\'e}ndez-Garc{\'i}a, {V. H.} and M. Lopez-Lopez",

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Hernandez-Marquez, F, Rivera-Alvarez, Z, Guillen-Cervantes, A, Huerta-Ruelas, J, Hernández, IC, Zamora-Peredo, L, Lastras-Martinez, A, Méndez-García, VH & Lopez-Lopez, M 2005, 'Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard', Papel presentado en 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005, 1/12/05 pp. 424-427. https://doi.org/10.1109/ICEEE.2005.1529660

Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard. / Hernandez-Marquez, F.; Rivera-Alvarez, Z.; Guillen-Cervantes, A. et al.
2005. 424-427 Papel presentado en 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005.

Producción científica: Contribución a una conferencia › Artículo

TY - CONF

T1 - Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard

AU - Hernandez-Marquez, F.

AU - Rivera-Alvarez, Z.

AU - Guillen-Cervantes, A.

AU - Huerta-Ruelas, J.

AU - Hernández, Ivan C.

AU - Zamora-Peredo, L.

AU - Lastras-Martinez, A.

AU - Méndez-García, V. H.

AU - Lopez-Lopez, M.

PY - 2005/12/1

Y1 - 2005/12/1

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AB - The Quantum Hall Effect allows to the national metrology Institutes to reproduce the unit of resistance (ohm) in terms of physical constants. We have made efforts in order to develop AlGaAs/GaAs heterostructures with enough quality to be used in metrology as a resistance standard. The ohmic contacts in the samples is one of the most important aspects for metrology applications, therefore good contacts are essential in the analysis of the longitudinal resistance under dissipationless condition. Measurements at 1.3 K temperature, in magnetic fields up to 12 T were made, as required to obtain Quantum Hall Effect phenomenon. Our results show that the developed samples have low longitudinal resistance, comparable with those used at the mexican national metrology institute as reference standard of dc resistance. © 2005 IEEE.

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Hernandez-Marquez F, Rivera-Alvarez Z, Guillen-Cervantes A, Huerta-Ruelas J, Hernández IC, Zamora-Peredo L et al.. Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard. 2005. Papel presentado en 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. doi: 10.1109/ICEEE.2005.1529660

Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard

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