Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard

F. Hernandez-Marquez; Z. Rivera-Alvarez; A. Guillen-Cervantes; J. Huerta-Ruelas; Ivan C. Hernández; L. Zamora-Peredo; A. Lastras-Martinez; V. H. Méndez-García; M. Lopez-Lopez

doi:10.1109/ICEEE.2005.1529660

Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard

F. Hernandez-Marquez, Z. Rivera-Alvarez, A. Guillen-Cervantes, J. Huerta-Ruelas, Ivan C. Hernández, L. Zamora-Peredo, A. Lastras-Martinez, V. H. Méndez-García, M. Lopez-Lopez

Research output: Contribution to conference › Paper

1 Scopus citations

Abstract

The Quantum Hall Effect allows to the national metrology Institutes to reproduce the unit of resistance (ohm) in terms of physical constants. We have made efforts in order to develop AlGaAs/GaAs heterostructures with enough quality to be used in metrology as a resistance standard. The ohmic contacts in the samples is one of the most important aspects for metrology applications, therefore good contacts are essential in the analysis of the longitudinal resistance under dissipationless condition. Measurements at 1.3 K temperature, in magnetic fields up to 12 T were made, as required to obtain Quantum Hall Effect phenomenon. Our results show that the developed samples have low longitudinal resistance, comparable with those used at the mexican national metrology institute as reference standard of dc resistance. © 2005 IEEE.

Original language	American English
Pages	424-427
Number of pages	4
DOIs	https://doi.org/10.1109/ICEEE.2005.1529660
State	Published - 1 Dec 2005
Externally published	Yes
Event	2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005 - Duration: 1 Dec 2005 → …

Conference

Conference	2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005
Period	1/12/05 → …

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10.1109/ICEEE.2005.1529660

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Hernandez-Marquez, F., Rivera-Alvarez, Z., Guillen-Cervantes, A., Huerta-Ruelas, J., Hernández, I. C., Zamora-Peredo, L., Lastras-Martinez, A., Méndez-García, V. H., & Lopez-Lopez, M. (2005). Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard. 424-427. Paper presented at 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. https://doi.org/10.1109/ICEEE.2005.1529660

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abstract = "The Quantum Hall Effect allows to the national metrology Institutes to reproduce the unit of resistance (ohm) in terms of physical constants. We have made efforts in order to develop AlGaAs/GaAs heterostructures with enough quality to be used in metrology as a resistance standard. The ohmic contacts in the samples is one of the most important aspects for metrology applications, therefore good contacts are essential in the analysis of the longitudinal resistance under dissipationless condition. Measurements at 1.3 K temperature, in magnetic fields up to 12 T were made, as required to obtain Quantum Hall Effect phenomenon. Our results show that the developed samples have low longitudinal resistance, comparable with those used at the mexican national metrology institute as reference standard of dc resistance. {\textcopyright} 2005 IEEE.",

author = "F. Hernandez-Marquez and Z. Rivera-Alvarez and A. Guillen-Cervantes and J. Huerta-Ruelas and Hern{\'a}ndez, {Ivan C.} and L. Zamora-Peredo and A. Lastras-Martinez and M{\'e}ndez-Garc{\'i}a, {V. H.} and M. Lopez-Lopez",

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Hernandez-Marquez, F, Rivera-Alvarez, Z, Guillen-Cervantes, A, Huerta-Ruelas, J, Hernández, IC, Zamora-Peredo, L, Lastras-Martinez, A, Méndez-García, VH & Lopez-Lopez, M 2005, 'Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard', Paper presented at 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005, 1/12/05 pp. 424-427. https://doi.org/10.1109/ICEEE.2005.1529660

Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard. / Hernandez-Marquez, F.; Rivera-Alvarez, Z.; Guillen-Cervantes, A. et al.
2005. 424-427 Paper presented at 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard

AU - Hernandez-Marquez, F.

AU - Rivera-Alvarez, Z.

AU - Guillen-Cervantes, A.

AU - Huerta-Ruelas, J.

AU - Hernández, Ivan C.

AU - Zamora-Peredo, L.

AU - Lastras-Martinez, A.

AU - Méndez-García, V. H.

AU - Lopez-Lopez, M.

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AB - The Quantum Hall Effect allows to the national metrology Institutes to reproduce the unit of resistance (ohm) in terms of physical constants. We have made efforts in order to develop AlGaAs/GaAs heterostructures with enough quality to be used in metrology as a resistance standard. The ohmic contacts in the samples is one of the most important aspects for metrology applications, therefore good contacts are essential in the analysis of the longitudinal resistance under dissipationless condition. Measurements at 1.3 K temperature, in magnetic fields up to 12 T were made, as required to obtain Quantum Hall Effect phenomenon. Our results show that the developed samples have low longitudinal resistance, comparable with those used at the mexican national metrology institute as reference standard of dc resistance. © 2005 IEEE.

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Hernandez-Marquez F, Rivera-Alvarez Z, Guillen-Cervantes A, Huerta-Ruelas J, Hernández IC, Zamora-Peredo L et al.. Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard. 2005. Paper presented at 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. doi: 10.1109/ICEEE.2005.1529660

Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard

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