TY - JOUR
T1 - Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions
AU - Torchynska, Tetyana
AU - Cisneros-Tamayo, Ricardo
AU - Polupan, Georgiy
AU - Stintz, Andreas
AU - Escobosa Echavarria, Arturo
N1 - Publisher Copyright:
© 2022 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
PY - 2022/9
Y1 - 2022/9
N2 - The parameters of quantum dots (QDs) of InAs inserted in Al0.30Ga0.70As/GaAs hetero structures with additional cap/buffer AlGaInAs quantum wells (QWs) of different compositions have been investigated by photoluminescence, transmission electron microscopy and high-resolution X-ray diffraction methods. QD structures with the buffer layers: In0.15Ga0.85As (#1) or In0.25Ga0.75As (#2) and covering (cap) layers: Al0.10In0.15Ga0.75As (#1) or Al0.40In0.15Ga0.45As (#2), are compared. Structure #1 is characterized by a higher density of QDs, high QD emission intensity and a smaller full width at half maximum of the PL bands, compared to #2. The dependence of the intensity of QD emission against temperatures of 10-500 K has been studied. Significant thermal quenching of the PL intensity was revealed in #1 compared to #2. HR-XRD investigation has confirmed that QD structures are of perfect crystalline quality with sharp QW interfaces and a high number of Pendellösung peaks were detected. To fit the HR-XRD scans, the X′Pert Epitaxy software has been applied. The peculiarities of the QD emission and the parameters of the HR-XRD scans are compared, as well as the advances of the QD structures studied are discussed.
AB - The parameters of quantum dots (QDs) of InAs inserted in Al0.30Ga0.70As/GaAs hetero structures with additional cap/buffer AlGaInAs quantum wells (QWs) of different compositions have been investigated by photoluminescence, transmission electron microscopy and high-resolution X-ray diffraction methods. QD structures with the buffer layers: In0.15Ga0.85As (#1) or In0.25Ga0.75As (#2) and covering (cap) layers: Al0.10In0.15Ga0.75As (#1) or Al0.40In0.15Ga0.45As (#2), are compared. Structure #1 is characterized by a higher density of QDs, high QD emission intensity and a smaller full width at half maximum of the PL bands, compared to #2. The dependence of the intensity of QD emission against temperatures of 10-500 K has been studied. Significant thermal quenching of the PL intensity was revealed in #1 compared to #2. HR-XRD investigation has confirmed that QD structures are of perfect crystalline quality with sharp QW interfaces and a high number of Pendellösung peaks were detected. To fit the HR-XRD scans, the X′Pert Epitaxy software has been applied. The peculiarities of the QD emission and the parameters of the HR-XRD scans are compared, as well as the advances of the QD structures studied are discussed.
UR - http://www.scopus.com/inward/record.url?scp=85137698119&partnerID=8YFLogxK
U2 - 10.1149/2162-8777/ac8bf5
DO - 10.1149/2162-8777/ac8bf5
M3 - Artículo
AN - SCOPUS:85137698119
SN - 2162-8769
VL - 11
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 9
M1 - 094002
ER -