Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions

Tetyana Torchynska, Ricardo Cisneros-Tamayo, Georgiy Polupan, Andreas Stintz, Arturo Escobosa Echavarria

Research output: Contribution to journalArticlepeer-review

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Abstract

The parameters of quantum dots (QDs) of InAs inserted in Al0.30Ga0.70As/GaAs hetero structures with additional cap/buffer AlGaInAs quantum wells (QWs) of different compositions have been investigated by photoluminescence, transmission electron microscopy and high-resolution X-ray diffraction methods. QD structures with the buffer layers: In0.15Ga0.85As (#1) or In0.25Ga0.75As (#2) and covering (cap) layers: Al0.10In0.15Ga0.75As (#1) or Al0.40In0.15Ga0.45As (#2), are compared. Structure #1 is characterized by a higher density of QDs, high QD emission intensity and a smaller full width at half maximum of the PL bands, compared to #2. The dependence of the intensity of QD emission against temperatures of 10-500 K has been studied. Significant thermal quenching of the PL intensity was revealed in #1 compared to #2. HR-XRD investigation has confirmed that QD structures are of perfect crystalline quality with sharp QW interfaces and a high number of Pendellösung peaks were detected. To fit the HR-XRD scans, the X′Pert Epitaxy software has been applied. The peculiarities of the QD emission and the parameters of the HR-XRD scans are compared, as well as the advances of the QD structures studied are discussed.

Original languageEnglish
Article number094002
JournalECS Journal of Solid State Science and Technology
Volume11
Issue number9
DOIs
StatePublished - Sep 2022

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