Resumen
The influence of oxygen flow at the hot-wire-CVD process on light-emission and structural properties of Si nano-crystallites embedded in amorphous silicon has been investigated. It was shown that increasing of an oxygen flow is accompanied by the Si nanocrystallite size variation and by the appearance of some new photoluminescence bands. Using of X-ray diffraction and photoluminescence methods the dependence of photoluminescence properties on the size of Si nanocrystallites was shown. The nature of light emission centers is discussed as well.
Título traducido de la contribución | Investigaciones de emisión y estructura de nanocristales de Si incrustados en silicio amorfo |
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Idioma original | Inglés |
Número de artículo | 243 |
Páginas (desde-hasta) | 1231-1235 |
Número de páginas | 5 |
Publicación | Journal of Physics: Conference Series |
Volumen | 61 |
N.º | 1 |
DOI | |
Estado | Publicada - 1 abr. 2007 |