Electrical and optical properties of non-uniform semiconducting synthetic diamond with deep impurity levels

Yuri V. Vorobiev; Roman V. Zakharchenko; Galina N. Semenova; Alexey V. Svitelskiy; Tatyana V. Torchinskaya

Electrical and optical properties of non-uniform semiconducting synthetic diamond with deep impurity levels

Yuri V. Vorobiev, Roman V. Zakharchenko, Galina N. Semenova, Alexey V. Svitelskiy, Tatyana V. Torchinskaya

Producción científica: Contribución a una conferencia › Artículo › revisión exhaustiva

Resumen

Synthetic boron-doped p-type single crystals of diamond possess a low-resistance surface layer. The photoconductivity of the bulk high-ohmic region exponentially increases with the increase of temperature. The activation energy of this dependence is 0.4 eV at low electric field and 0.3 eV at high field. The change of activation energy is explained on the basis of the hydrogen-like model of the boron acceptor center. In high electric field the electric current instability is observed connected with the deep levels recharging and thermal breakdown phenomena.

Idioma original	Inglés
Páginas	307-310
Número de páginas	4
Estado	Publicada - 1996
Publicado de forma externa	Sí
Evento	Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr Duración: 29 abr. 1996 → 3 may. 1996

Conferencia

Conferencia	Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9
Ciudad	Toulouse, Fr
Período	29/04/96 → 3/05/96

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title = "Electrical and optical properties of non-uniform semiconducting synthetic diamond with deep impurity levels",

abstract = "Synthetic boron-doped p-type single crystals of diamond possess a low-resistance surface layer. The photoconductivity of the bulk high-ohmic region exponentially increases with the increase of temperature. The activation energy of this dependence is 0.4 eV at low electric field and 0.3 eV at high field. The change of activation energy is explained on the basis of the hydrogen-like model of the boron acceptor center. In high electric field the electric current instability is observed connected with the deep levels recharging and thermal breakdown phenomena.",

author = "Vorobiev, {Yuri V.} and Zakharchenko, {Roman V.} and Semenova, {Galina N.} and Svitelskiy, {Alexey V.} and Torchinskaya, {Tatyana V.}",

year = "1996",

language = "Ingl{\'e}s",

pages = "307--310",

note = "Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 ; Conference date: 29-04-1996 Through 03-05-1996",

}

Electrical and optical properties of non-uniform semiconducting synthetic diamond with deep impurity levels. / Vorobiev, Yuri V.; Zakharchenko, Roman V.; Semenova, Galina N. et al.
1996. 307-310 Papel presentado en Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9, Toulouse, Fr.

Producción científica: Contribución a una conferencia › Artículo › revisión exhaustiva

TY - CONF

T1 - Electrical and optical properties of non-uniform semiconducting synthetic diamond with deep impurity levels

AU - Vorobiev, Yuri V.

AU - Zakharchenko, Roman V.

AU - Semenova, Galina N.

AU - Svitelskiy, Alexey V.

AU - Torchinskaya, Tatyana V.

PY - 1996

Y1 - 1996

N2 - Synthetic boron-doped p-type single crystals of diamond possess a low-resistance surface layer. The photoconductivity of the bulk high-ohmic region exponentially increases with the increase of temperature. The activation energy of this dependence is 0.4 eV at low electric field and 0.3 eV at high field. The change of activation energy is explained on the basis of the hydrogen-like model of the boron acceptor center. In high electric field the electric current instability is observed connected with the deep levels recharging and thermal breakdown phenomena.

AB - Synthetic boron-doped p-type single crystals of diamond possess a low-resistance surface layer. The photoconductivity of the bulk high-ohmic region exponentially increases with the increase of temperature. The activation energy of this dependence is 0.4 eV at low electric field and 0.3 eV at high field. The change of activation energy is explained on the basis of the hydrogen-like model of the boron acceptor center. In high electric field the electric current instability is observed connected with the deep levels recharging and thermal breakdown phenomena.

UR - http://www.scopus.com/inward/record.url?scp=0030395193&partnerID=8YFLogxK

M3 - Artículo

SP - 307

EP - 310

T2 - Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9

Y2 - 29 April 1996 through 3 May 1996

ER -

Electrical and optical properties of non-uniform semiconducting synthetic diamond with deep impurity levels

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