Abstract
Synthetic boron-doped p-type single crystals of diamond possess a low-resistance surface layer. The photoconductivity of the bulk high-ohmic region exponentially increases with the increase of temperature. The activation energy of this dependence is 0.4 eV at low electric field and 0.3 eV at high field. The change of activation energy is explained on the basis of the hydrogen-like model of the boron acceptor center. In high electric field the electric current instability is observed connected with the deep levels recharging and thermal breakdown phenomena.
Original language | English |
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Pages | 307-310 |
Number of pages | 4 |
State | Published - 1996 |
Externally published | Yes |
Event | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr Duration: 29 Apr 1996 → 3 May 1996 |
Conference
Conference | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 |
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City | Toulouse, Fr |
Period | 29/04/96 → 3/05/96 |