TY - JOUR
T1 - Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures
AU - Zambrano-Serrano, M. A.
AU - Hernández, Carlos A.
AU - de Melo, O.
AU - Behar, M.
AU - Gallardo-Hernández, S.
AU - Casallas-Moreno, Y. L.
AU - Ponce, A.
AU - Hernandez-Robles, A.
AU - Bahena-Uribe, D.
AU - Yee-Rendón, C. M.
AU - López-López, M.
N1 - Publisher Copyright:
© 2022 The Author(s). Published by IOP Publishing Ltd.
PY - 2022/6/1
Y1 - 2022/6/1
N2 - n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3. A particular mosaic structure was induced by the Si-doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples (1.3 × 1020 atoms cm−3).
AB - n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3. A particular mosaic structure was induced by the Si-doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples (1.3 × 1020 atoms cm−3).
KW - GaN
KW - RBS
KW - Si-doping
KW - crystal defects
KW - heteroepitaxy
KW - molecular beam epitaxy
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=85132533131&partnerID=8YFLogxK
U2 - 10.1088/2053-1591/ac7512
DO - 10.1088/2053-1591/ac7512
M3 - Artículo
AN - SCOPUS:85132533131
SN - 2053-1591
VL - 9
JO - Materials Research Express
JF - Materials Research Express
IS - 6
M1 - 065903
ER -