Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures

M. A. Zambrano-Serrano; Carlos A. Hernández; O. de Melo; M. Behar; S. Gallardo-Hernández; Y. L. Casallas-Moreno; A. Ponce; A. Hernandez-Robles; D. Bahena-Uribe; C. M. Yee-Rendón; M. López-López

doi:10.1088/2053-1591/ac7512

Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures

M. A. Zambrano-Serrano, Carlos A. Hernández, O. de Melo, M. Behar, S. Gallardo-Hernández, Y. L. Casallas-Moreno, A. Ponce, A. Hernandez-Robles, D. Bahena-Uribe, C. M. Yee-Rendón, M. López-López

Unidad Profesional Interdisciplinaria de Ingeniería y Tecnologías Avanzadas (UPIITA)

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 10¹⁹ atoms cm⁻³. A particular mosaic structure was induced by the Si-doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples (1.3 × 10²⁰ atoms cm⁻³).

Original language	English
Article number	065903
Journal	Materials Research Express
Volume	9
Issue number	6
DOIs	https://doi.org/10.1088/2053-1591/ac7512
State	Published - 1 Jun 2022

Keywords

GaN
RBS
Si-doping
crystal defects
heteroepitaxy
molecular beam epitaxy
silicon

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10.1088/2053-1591/ac7512

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Zambrano-Serrano, M. A., Hernández, C. A., de Melo, O., Behar, M., Gallardo-Hernández, S., Casallas-Moreno, Y. L., Ponce, A., Hernandez-Robles, A., Bahena-Uribe, D., Yee-Rendón, C. M., & López-López, M. (2022). Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures. Materials Research Express, 9(6), Article 065903. https://doi.org/10.1088/2053-1591/ac7512

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title = "Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures",

abstract = "n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3. A particular mosaic structure was induced by the Si-doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples (1.3 × 1020 atoms cm−3).",

keywords = "GaN, RBS, Si-doping, crystal defects, heteroepitaxy, molecular beam epitaxy, silicon",

author = "Zambrano-Serrano, {M. A.} and Hern{\'a}ndez, {Carlos A.} and {de Melo}, O. and M. Behar and S. Gallardo-Hern{\'a}ndez and Casallas-Moreno, {Y. L.} and A. Ponce and A. Hernandez-Robles and D. Bahena-Uribe and Yee-Rend{\'o}n, {C. M.} and M. L{\'o}pez-L{\'o}pez",

note = "Publisher Copyright: {\textcopyright} 2022 The Author(s). Published by IOP Publishing Ltd.",

year = "2022",

month = jun,

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doi = "10.1088/2053-1591/ac7512",

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Zambrano-Serrano, MA, Hernández, CA, de Melo, O, Behar, M, Gallardo-Hernández, S, Casallas-Moreno, YL, Ponce, A, Hernandez-Robles, A, Bahena-Uribe, D, Yee-Rendón, CM & López-López, M 2022, 'Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures', Materials Research Express, vol. 9, no. 6, 065903. https://doi.org/10.1088/2053-1591/ac7512

TY - JOUR

T1 - Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures

AU - Zambrano-Serrano, M. A.

AU - Hernández, Carlos A.

AU - de Melo, O.

AU - Behar, M.

AU - Gallardo-Hernández, S.

AU - Casallas-Moreno, Y. L.

AU - Ponce, A.

AU - Hernandez-Robles, A.

AU - Bahena-Uribe, D.

AU - Yee-Rendón, C. M.

AU - López-López, M.

PY - 2022/6/1

Y1 - 2022/6/1

N2 - n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3. A particular mosaic structure was induced by the Si-doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples (1.3 × 1020 atoms cm−3).

AB - n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3. A particular mosaic structure was induced by the Si-doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples (1.3 × 1020 atoms cm−3).

KW - GaN

KW - RBS

KW - Si-doping

KW - crystal defects

KW - heteroepitaxy

KW - molecular beam epitaxy

KW - silicon

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U2 - 10.1088/2053-1591/ac7512

DO - 10.1088/2053-1591/ac7512

M3 - Artículo

AN - SCOPUS:85132533131

SN - 2053-1591

VL - 9

JO - Materials Research Express

JF - Materials Research Express

IS - 6

M1 - 065903

ER -

Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures

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