Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics

T. Kryshtab; J. A. Andraca; L. V. Borkovska; N. O. Korsunska; Ye F. Venger; Yu G. Sadofyev

doi:10.1016/j.mejo.2007.07.024

Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics

T. Kryshtab, J. A. Andraca, L. V. Borkovska, N. O. Korsunska, Ye F. Venger, Yu G. Sadofyev

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

4 Citas (Scopus)

Resumen

The effect of CdTe monolayer (ML) insertion on the structural and luminescence characteristics of ZnCdTe/ZnTe quantum well (QW) was investigated by a high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) methods. The structures were grown by MBE on just-oriented or 3° off (0 0 1) GaAs substrate and contained Zn_0.6Cd_0.4Te QW with or without CdTe 1 ML insertion embedded in the middle of QW. HRXRD(0 0 4) diffraction profiles and reciprocal space maps in the vicinity of the (0 0 4) reflection were measured. CdTe insertion led to the shift of QW-related peak to larger angels as well as to significant broadening and disappearance of fringes. The low-temperature PL investigations showed that CdTe insertion resulted in a "blue" shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity.

Idioma original	Inglés
Páginas (desde-hasta)	418-422
Número de páginas	5
Publicación	Microelectronics Journal
Volumen	39
N.º	3-4
DOI	https://doi.org/10.1016/j.mejo.2007.07.024
Estado	Publicada - mar. 2008

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@article{17d5253bf0494f248e90b386b2b1a253,

title = "Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics",

abstract = "The effect of CdTe monolayer (ML) insertion on the structural and luminescence characteristics of ZnCdTe/ZnTe quantum well (QW) was investigated by a high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) methods. The structures were grown by MBE on just-oriented or 3° off (0 0 1) GaAs substrate and contained Zn0.6Cd0.4Te QW with or without CdTe 1 ML insertion embedded in the middle of QW. HRXRD(0 0 4) diffraction profiles and reciprocal space maps in the vicinity of the (0 0 4) reflection were measured. CdTe insertion led to the shift of QW-related peak to larger angels as well as to significant broadening and disappearance of fringes. The low-temperature PL investigations showed that CdTe insertion resulted in a {"}blue{"} shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity.",

keywords = "CdTe ML insertion, HRXRD, MBE, PL, QW, ZnTe",

author = "T. Kryshtab and Andraca, {J. A.} and Borkovska, {L. V.} and Korsunska, {N. O.} and Venger, {Ye F.} and Sadofyev, {Yu G.}",

year = "2008",

month = mar,

doi = "10.1016/j.mejo.2007.07.024",

language = "Ingl{\'e}s",

volume = "39",

pages = "418--422",

journal = "Microelectronics Journal",

issn = "0026-2692",

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TY - JOUR

T1 - Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics

AU - Kryshtab, T.

AU - Andraca, J. A.

AU - Borkovska, L. V.

AU - Korsunska, N. O.

AU - Venger, Ye F.

AU - Sadofyev, Yu G.

PY - 2008/3

Y1 - 2008/3

N2 - The effect of CdTe monolayer (ML) insertion on the structural and luminescence characteristics of ZnCdTe/ZnTe quantum well (QW) was investigated by a high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) methods. The structures were grown by MBE on just-oriented or 3° off (0 0 1) GaAs substrate and contained Zn0.6Cd0.4Te QW with or without CdTe 1 ML insertion embedded in the middle of QW. HRXRD(0 0 4) diffraction profiles and reciprocal space maps in the vicinity of the (0 0 4) reflection were measured. CdTe insertion led to the shift of QW-related peak to larger angels as well as to significant broadening and disappearance of fringes. The low-temperature PL investigations showed that CdTe insertion resulted in a "blue" shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity.

AB - The effect of CdTe monolayer (ML) insertion on the structural and luminescence characteristics of ZnCdTe/ZnTe quantum well (QW) was investigated by a high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) methods. The structures were grown by MBE on just-oriented or 3° off (0 0 1) GaAs substrate and contained Zn0.6Cd0.4Te QW with or without CdTe 1 ML insertion embedded in the middle of QW. HRXRD(0 0 4) diffraction profiles and reciprocal space maps in the vicinity of the (0 0 4) reflection were measured. CdTe insertion led to the shift of QW-related peak to larger angels as well as to significant broadening and disappearance of fringes. The low-temperature PL investigations showed that CdTe insertion resulted in a "blue" shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity.

KW - CdTe ML insertion

KW - HRXRD

KW - MBE

KW - PL

KW - QW

KW - ZnTe

UR - http://www.scopus.com/inward/record.url?scp=40749111470&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2007.07.024

DO - 10.1016/j.mejo.2007.07.024

M3 - Artículo

SN - 0026-2692

VL - 39

SP - 418

EP - 422

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3-4

ER -

Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics

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