Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics

T. Kryshtab, J. A. Andraca, L. V. Borkovska, N. O. Korsunska, Ye F. Venger, Yu G. Sadofyev

Research output: Contribution to journalArticle

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Abstract

The effect of CdTe monolayer (ML) insertion on the structural and luminescence characteristics of ZnCdTe/ZnTe quantum well (QW) was investigated by a high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) methods. The structures were grown by MBE on just-oriented or 3° off (0 0 1) GaAs substrate and contained Zn0.6Cd0.4Te QW with or without CdTe 1 ML insertion embedded in the middle of QW. HRXRD(0 0 4) diffraction profiles and reciprocal space maps in the vicinity of the (0 0 4) reflection were measured. CdTe insertion led to the shift of QW-related peak to larger angels as well as to significant broadening and disappearance of fringes. The low-temperature PL investigations showed that CdTe insertion resulted in a "blue" shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity. © 2007 Elsevier Ltd. All rights reserved.
Original languageAmerican English
Pages (from-to)418-422
Number of pages375
JournalMicroelectronics Journal
DOIs
StatePublished - 1 Mar 2008
Externally publishedYes

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Semiconductor quantum wells
Monolayers
X-ray diffraction
Photoluminescence
luminescence
diffraction
substrate
X ray diffraction
Molecular beam epitaxy
effect
Luminescence
Diffraction
Substrates
method
Temperature

Cite this

Kryshtab, T., Andraca, J. A., Borkovska, L. V., Korsunska, N. O., Venger, Y. F., & Sadofyev, Y. G. (2008). Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics. Microelectronics Journal, 418-422. https://doi.org/10.1016/j.mejo.2007.07.024
Kryshtab, T. ; Andraca, J. A. ; Borkovska, L. V. ; Korsunska, N. O. ; Venger, Ye F. ; Sadofyev, Yu G. / Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics. In: Microelectronics Journal. 2008 ; pp. 418-422.
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Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics. / Kryshtab, T.; Andraca, J. A.; Borkovska, L. V.; Korsunska, N. O.; Venger, Ye F.; Sadofyev, Yu G.

In: Microelectronics Journal, 01.03.2008, p. 418-422.

Research output: Contribution to journalArticle

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T1 - Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics

AU - Kryshtab, T.

AU - Andraca, J. A.

AU - Borkovska, L. V.

AU - Korsunska, N. O.

AU - Venger, Ye F.

AU - Sadofyev, Yu G.

PY - 2008/3/1

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N2 - The effect of CdTe monolayer (ML) insertion on the structural and luminescence characteristics of ZnCdTe/ZnTe quantum well (QW) was investigated by a high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) methods. The structures were grown by MBE on just-oriented or 3° off (0 0 1) GaAs substrate and contained Zn0.6Cd0.4Te QW with or without CdTe 1 ML insertion embedded in the middle of QW. HRXRD(0 0 4) diffraction profiles and reciprocal space maps in the vicinity of the (0 0 4) reflection were measured. CdTe insertion led to the shift of QW-related peak to larger angels as well as to significant broadening and disappearance of fringes. The low-temperature PL investigations showed that CdTe insertion resulted in a "blue" shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity. © 2007 Elsevier Ltd. All rights reserved.

AB - The effect of CdTe monolayer (ML) insertion on the structural and luminescence characteristics of ZnCdTe/ZnTe quantum well (QW) was investigated by a high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) methods. The structures were grown by MBE on just-oriented or 3° off (0 0 1) GaAs substrate and contained Zn0.6Cd0.4Te QW with or without CdTe 1 ML insertion embedded in the middle of QW. HRXRD(0 0 4) diffraction profiles and reciprocal space maps in the vicinity of the (0 0 4) reflection were measured. CdTe insertion led to the shift of QW-related peak to larger angels as well as to significant broadening and disappearance of fringes. The low-temperature PL investigations showed that CdTe insertion resulted in a "blue" shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity. © 2007 Elsevier Ltd. All rights reserved.

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