Abstract
The effect of CdTe monolayer (ML) insertion on the structural and luminescence characteristics of ZnCdTe/ZnTe quantum well (QW) was investigated by a high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) methods. The structures were grown by MBE on just-oriented or 3° off (0 0 1) GaAs substrate and contained Zn0.6Cd0.4Te QW with or without CdTe 1 ML insertion embedded in the middle of QW. HRXRD(0 0 4) diffraction profiles and reciprocal space maps in the vicinity of the (0 0 4) reflection were measured. CdTe insertion led to the shift of QW-related peak to larger angels as well as to significant broadening and disappearance of fringes. The low-temperature PL investigations showed that CdTe insertion resulted in a "blue" shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity.
Original language | English |
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Pages (from-to) | 418-422 |
Number of pages | 5 |
Journal | Microelectronics Journal |
Volume | 39 |
Issue number | 3-4 |
DOIs | |
State | Published - Mar 2008 |
Keywords
- CdTe ML insertion
- HRXRD
- MBE
- PL
- QW
- ZnTe