TY - GEN
T1 - Dynamic Response Considerations in Typical CMOS-MEMS Accelerometer Structures
AU - Granados-Rojas, Benito
AU - Reyes-Barranca, Mario A.
AU - Abarca-Jimenez, Griselda S.
AU - Gonzalez-Navarro, Yesenia E.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/2
Y1 - 2020/2
N2 - This work presents important considerations regarding the dynamic response of a CMOS-MEMS spring-mass-system to step (Heaviside) and ramp (linear input) force stimuli. In the design CMOS-MEMS accelerometers most performance estimations and calculations are based in the steady-state behavior of damped systems, the present report focuses in the transient response and oscillatory error due to external forces actually present in many realworld yet simple applications where vibrations and undesired disturbances might appear. The dynamic model and transfer function of a micro-spring-mass system is obtained according to the technological fabrication parameters of a typical CMOS-MEMS micro-sensor. The displacement and therefore capacitance shift of the microstructure is modeled and simulated primarily while neglecting gravity and the damping phenomena related to air-filled micro gaps inherent to the micro-machining (wet chemical) process needed to release movable metallic structures out of a conventional CMOS integrated circuit. The results are intended to be considered in the design of space applications such as spacecraft instrumentation.
AB - This work presents important considerations regarding the dynamic response of a CMOS-MEMS spring-mass-system to step (Heaviside) and ramp (linear input) force stimuli. In the design CMOS-MEMS accelerometers most performance estimations and calculations are based in the steady-state behavior of damped systems, the present report focuses in the transient response and oscillatory error due to external forces actually present in many realworld yet simple applications where vibrations and undesired disturbances might appear. The dynamic model and transfer function of a micro-spring-mass system is obtained according to the technological fabrication parameters of a typical CMOS-MEMS micro-sensor. The displacement and therefore capacitance shift of the microstructure is modeled and simulated primarily while neglecting gravity and the damping phenomena related to air-filled micro gaps inherent to the micro-machining (wet chemical) process needed to release movable metallic structures out of a conventional CMOS integrated circuit. The results are intended to be considered in the design of space applications such as spacecraft instrumentation.
KW - Accelerometer
KW - CMOS-MEMS
KW - Dynamic Model
KW - MEMS
KW - Mechanical Model
KW - Step Response
UR - http://www.scopus.com/inward/record.url?scp=85084989423&partnerID=8YFLogxK
U2 - 10.1109/LAEDC49063.2020.9073230
DO - 10.1109/LAEDC49063.2020.9073230
M3 - Contribución a la conferencia
AN - SCOPUS:85084989423
T3 - LAEDC 2020 - Latin American Electron Devices Conference
BT - LAEDC 2020 - Latin American Electron Devices Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 Latin American Electron Devices Conference, LAEDC 2020
Y2 - 25 February 2020 through 28 February 2020
ER -