Resumen
© 1992 Institute of Electrical and Electronics Engineers Inc. All rights reserved. We show that the development of 2.2μm emission low threshold Ridge-Waveguide lasers from GalnAsSb/GaAlAsSb DH wafers is limited by the excessive current spread in the low resistivity p-type active layer.
Idioma original | Inglés estadounidense |
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Páginas | 60-61 |
Número de páginas | 2 |
DOI | |
Estado | Publicada - 1 ene. 1992 |
Publicado de forma externa | Sí |
Evento | Conference Digest - IEEE International Semiconductor Laser Conference - Duración: 1 ene. 1992 → … |
Conferencia
Conferencia | Conference Digest - IEEE International Semiconductor Laser Conference |
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Período | 1/01/92 → … |