Development of 2.2 μm emission Ridge Waveguide lasers with low threshold GalnAsSb/GaAlAsSb DH wafers

M. B.Z. Morosini; J. L. Herrera-Pérez; A. C.F. Da Silveira; A. A.G. Von Zuben; M. S.S. Loural; N. B. Patel

doi:10.1109/ISLC.1992.763571

Development of 2.2 μm emission Ridge Waveguide lasers with low threshold GalnAsSb/GaAlAsSb DH wafers

M. B.Z. Morosini, J. L. Herrera-Pérez, A. C.F. Da Silveira, A. A.G. Von Zuben, M. S.S. Loural, N. B. Patel

Research output: Contribution to conference › Paper

Abstract

© 1992 Institute of Electrical and Electronics Engineers Inc. All rights reserved. We show that the development of 2.2μm emission low threshold Ridge-Waveguide lasers from GalnAsSb/GaAlAsSb DH wafers is limited by the excessive current spread in the low resistivity p-type active layer.

Original language	American English
Pages	60-61
Number of pages	2
DOIs	https://doi.org/10.1109/ISLC.1992.763571
State	Published - 1 Jan 1992
Externally published	Yes
Event	Conference Digest - IEEE International Semiconductor Laser Conference - Duration: 1 Jan 1992 → …

Conference

Conference	Conference Digest - IEEE International Semiconductor Laser Conference
Period	1/01/92 → …

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10.1109/ISLC.1992.763571

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title = "Development of 2.2 μm emission Ridge Waveguide lasers with low threshold GalnAsSb/GaAlAsSb DH wafers",

abstract = "{\textcopyright} 1992 Institute of Electrical and Electronics Engineers Inc. All rights reserved. We show that the development of 2.2μm emission low threshold Ridge-Waveguide lasers from GalnAsSb/GaAlAsSb DH wafers is limited by the excessive current spread in the low resistivity p-type active layer.",

author = "Morosini, {M. B.Z.} and Herrera-P{\'e}rez, {J. L.} and {Da Silveira}, {A. C.F.} and {Von Zuben}, {A. A.G.} and Loural, {M. S.S.} and Patel, {N. B.}",

year = "1992",

month = jan,

day = "1",

doi = "10.1109/ISLC.1992.763571",

language = "American English",

pages = "60--61",

note = "Conference Digest - IEEE International Semiconductor Laser Conference ; Conference date: 01-01-1992",

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T1 - Development of 2.2 μm emission Ridge Waveguide lasers with low threshold GalnAsSb/GaAlAsSb DH wafers

AU - Morosini, M. B.Z.

AU - Herrera-Pérez, J. L.

AU - Da Silveira, A. C.F.

AU - Von Zuben, A. A.G.

AU - Loural, M. S.S.

AU - Patel, N. B.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - © 1992 Institute of Electrical and Electronics Engineers Inc. All rights reserved. We show that the development of 2.2μm emission low threshold Ridge-Waveguide lasers from GalnAsSb/GaAlAsSb DH wafers is limited by the excessive current spread in the low resistivity p-type active layer.

AB - © 1992 Institute of Electrical and Electronics Engineers Inc. All rights reserved. We show that the development of 2.2μm emission low threshold Ridge-Waveguide lasers from GalnAsSb/GaAlAsSb DH wafers is limited by the excessive current spread in the low resistivity p-type active layer.

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U2 - 10.1109/ISLC.1992.763571

DO - 10.1109/ISLC.1992.763571

M3 - Paper

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T2 - Conference Digest - IEEE International Semiconductor Laser Conference

Y2 - 1 January 1992

ER -

Development of 2.2 μm emission Ridge Waveguide lasers with low threshold GalnAsSb/GaAlAsSb DH wafers

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Conference

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