Correlation between the photoluminescence and different types of Si nano-clusters in amorphous silicon

T. V. Torchynska; A. L. Quintos Vazquez; G. Polupan; Y. Matsumoto; L. Khomenkova; L. Shcherbyna

doi:10.1016/j.jnoncrysol.2007.10.086

Correlation between the photoluminescence and different types of Si nano-clusters in amorphous silicon

T. V. Torchynska, A. L. Quintos Vazquez, G. Polupan, Y. Matsumoto, L. Khomenkova, L. Shcherbyna

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

12 Citas (Scopus)

Resumen

This paper presents the results of PL spectrum study for Si nano-clusters in amorphous silicon matrix. The hydrogenated amorphous Si layers were prepared by the hot-wire CVD method on glass substrates. The layers were deposited at different wafer temperatures 280, 360, 420 and 460 °C and at one filament temperature of 1650 °C. The joint analysis of PL and X-ray diffraction spectra in dependence on the technological conditions and on different sizes of Si nano-clusters has been done. The mechanisms of PL are discussed as well.

Idioma original	Inglés
Páginas (desde-hasta)	2186-2189
Número de páginas	4
Publicación	Journal of Non-Crystalline Solids
Volumen	354
N.º	19-25
DOI	https://doi.org/10.1016/j.jnoncrysol.2007.10.086
Estado	Publicada - 1 may. 2008

Acceder al documento

10.1016/j.jnoncrysol.2007.10.086

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{14666283de9a4286b40b167bb92b7f08,

title = "Correlation between the photoluminescence and different types of Si nano-clusters in amorphous silicon",

abstract = "This paper presents the results of PL spectrum study for Si nano-clusters in amorphous silicon matrix. The hydrogenated amorphous Si layers were prepared by the hot-wire CVD method on glass substrates. The layers were deposited at different wafer temperatures 280, 360, 420 and 460 °C and at one filament temperature of 1650 °C. The joint analysis of PL and X-ray diffraction spectra in dependence on the technological conditions and on different sizes of Si nano-clusters has been done. The mechanisms of PL are discussed as well.",

keywords = "Chemical vapor deposition, Luminescence, Nano-crystals, Optical spectroscopy, Silicon, X-ray diffraction",

author = "Torchynska, {T. V.} and {Quintos Vazquez}, {A. L.} and G. Polupan and Y. Matsumoto and L. Khomenkova and L. Shcherbyna",

note = "Funding Information: This work was partially supported by CONACYT Mexico–Ukraine cooperation project, CONACYT project 58358, as well as by SIP-IPN, Mexico.",

year = "2008",

month = may,

day = "1",

doi = "10.1016/j.jnoncrysol.2007.10.086",

language = "Ingl{\'e}s",

volume = "354",

pages = "2186--2189",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

number = "19-25",

}

TY - JOUR

T1 - Correlation between the photoluminescence and different types of Si nano-clusters in amorphous silicon

AU - Torchynska, T. V.

AU - Quintos Vazquez, A. L.

AU - Polupan, G.

AU - Matsumoto, Y.

AU - Khomenkova, L.

AU - Shcherbyna, L.

N1 - Funding Information: This work was partially supported by CONACYT Mexico–Ukraine cooperation project, CONACYT project 58358, as well as by SIP-IPN, Mexico.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - This paper presents the results of PL spectrum study for Si nano-clusters in amorphous silicon matrix. The hydrogenated amorphous Si layers were prepared by the hot-wire CVD method on glass substrates. The layers were deposited at different wafer temperatures 280, 360, 420 and 460 °C and at one filament temperature of 1650 °C. The joint analysis of PL and X-ray diffraction spectra in dependence on the technological conditions and on different sizes of Si nano-clusters has been done. The mechanisms of PL are discussed as well.

AB - This paper presents the results of PL spectrum study for Si nano-clusters in amorphous silicon matrix. The hydrogenated amorphous Si layers were prepared by the hot-wire CVD method on glass substrates. The layers were deposited at different wafer temperatures 280, 360, 420 and 460 °C and at one filament temperature of 1650 °C. The joint analysis of PL and X-ray diffraction spectra in dependence on the technological conditions and on different sizes of Si nano-clusters has been done. The mechanisms of PL are discussed as well.

KW - Chemical vapor deposition

KW - Luminescence

KW - Nano-crystals

KW - Optical spectroscopy

KW - Silicon

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=42649098910&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2007.10.086

DO - 10.1016/j.jnoncrysol.2007.10.086

M3 - Artículo

SN - 0022-3093

VL - 354

SP - 2186

EP - 2189

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 19-25

ER -

Correlation between the photoluminescence and different types of Si nano-clusters in amorphous silicon

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto