Abstract
This paper presents the results of PL spectrum study for Si nano-clusters in amorphous silicon matrix. The hydrogenated amorphous Si layers were prepared by the hot-wire CVD method on glass substrates. The layers were deposited at different wafer temperatures 280, 360, 420 and 460 °C and at one filament temperature of 1650 °C. The joint analysis of PL and X-ray diffraction spectra in dependence on the technological conditions and on different sizes of Si nano-clusters has been done. The mechanisms of PL are discussed as well.
Original language | English |
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Pages (from-to) | 2186-2189 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 354 |
Issue number | 19-25 |
DOIs | |
State | Published - 1 May 2008 |
Keywords
- Chemical vapor deposition
- Luminescence
- Nano-crystals
- Optical spectroscopy
- Silicon
- X-ray diffraction