Concentration-dependent photoluminescence and Raman of p-type GaAs grown in a metallic-arsenic-based-MOCVD system

Ingeniería y ciencia de los materiales

• Hole concentration 100%
• Photoluminescence 85%
• Metallorganic chemical vapor deposition 83%
• Arsenic 78%
• Doping (additives) 39%
• Epilayers 29%
• Growth temperature 28%
• Phonons 27%
• Organometallics 26%
• Raman scattering 25%
• Gallium 24%
• Optical properties 21%
• Structural properties 19%
• Hydrogen 14%
• Gases 10%

Física y astronomía

• arsenic 56%
• metalorganic chemical vapor deposition 50%
• photoluminescence 37%
• organometallic compounds 20%
• gallium 13%
• Raman spectra 10%
• atmospheres 9%
• phonons 8%
• optical properties 8%
• hydrogen 8%
• characterization 7%
• gases 6%
• temperature 3%

Química

• Hole Concentration 80%
• Photoluminescence 40%
• Radiative Transition 25%
• Organometallic Compound 20%
• Optical Property 12%
• Gas 9%
• Hydrogen 8%
• Mixture 7%